IRFG6110_15 Datasheet, PDF (1/12 Pages) International Rectifier – Simple Drive Requirements

PD-90436G
IRFG6110
JANTX2N7336
POWER MOSFET
JANTXV2N7336
THRU-HOLE (MO-036AB)
REF:MIL-PRF-19500/598
100V, Combination 2N-2P-CHANNEL
HEXFET^® MOSFET TECHNOLOGY
Product Summary
Part Number RDS(on)
IRFG6110
0.7Ω
IRFG6110
1.4Ω
ID CHANNEL
1.0A
N
-0.75A P
HEXFET^® MOSFET technology is the key to International
Rectifier’s advanced line of power MOSFET transistors. The
efficient geometry design achieves very low on-state resistance
combined with high transconductance. HEXFET transistors
also feature all of the well-established advantages of MOSFETs,
such as voltage control, very fast switching, ease of paralleling
and electrical parameter temperature stability. They are well-
suited for applications such as switching power supplies, motor
controls, inverters, choppers, audio amplifiers, high energy
pulse circuits, and virtually any application where high reliability
is required. The HEXFET transistor’s totally isolated package
eliminates the need for additional isolating material between the
device and the heatsink. This improves thermal efficiency and
reduces drain capacitance.
MO-036AB
Features:
n Simple Drive Requirements
n Ease of Paralleling
n Hermetically Sealed
n Electrically Isolated
n Dynamic dv/dt Rating
n Light-weight
Absolute Maximum Ratings (Per Die)
Parameter
ID @ VGS =± 10V, TC = 25°C Continuous Drain Current
ID @ VGS =± 10V, TC = 100°C Continuous Drain Current
IDM
Pulsed Drain Current À
PD @ TC = 25°C
Max. Power Dissipation
Linear Derating Factor
VGS
EAS
IAR
EAR
dv/dt
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current À
Repetitive Avalanche Energy À
Peak Diode Recovery dv/dt
TJ
TSTG
Operating Junction
Storage Temperature Range
Lead Temperature
Weight
For footnotes, refer to the last page
www.irf.com
N-Channel
P-Channel
1.0
-0.75
0.6
-0.5
4.0
-3.0
1.4
1.4
0.011
0.011
±20
±20
75 Á
75 Ä
1.0
-0.75
0.14
0.14
5.5 Â
-5.5 Å
-55 to 150
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
°C
300 (0.63 in./1.6 mm from case for 10s)
1.3 (Typical)
g
1
02/17/10