IRFG5110 Datasheet, PDF (1/12 Pages) International Rectifier – 100V, Combination 2N-2P-CHANNEL

PD - 90437D
IRFG5110
POWER MOSFET
100V, Combination 2N-2P-CHANNEL
THRU-HOLE (MO-036AB)
HEXFET^® MOSFET TECHNOLOGY
Product Summary
Part Number RDS(on)
IRFG5110
0.7Ω
IRFG5110
0.7Ω
ID
1.0A
-1.0A
CHANNEL
N
P
HEXFET^® MOSFET technology is the key to International
Rectifier’s advanced line of power MOSFET transistors. The
efficient geometry design achieves very low on-state resis-
tance combined with high transconductance. HEXFET tran-
sistors also feature all of the well-established advantages
of MOSFETs, such as voltage control, very fast switching,
ease of paralleling and electrical parameter temperature
stability. They are well-suited for applications such as switch-
ing power supplies, motor controls, inverters, choppers,
audio amplifiers, high energy pulse circuits, and virtually
any application where high reliability is required. The
HEXFET transistor’s totally isolated package eliminates the
need for additional isolating material between the device
and the heatsink. This improves thermal efficiency and
reduces drain capacitance.
Absolute Maximum Ratings (Per Die)
Parameter
ID @ VGS =± 10V, TC = 25°C Continuous Drain Current
ID @ VGS =± 10V, TC = 100°C Continuous Drain Current
IDM
Pulsed Drain Current ➀
PD @ TC = 25°C
Max. Power Dissipation
Linear Derating Factor
VGS
EAS
IAR
EAR
dv/dt
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current ➀
Repetitive Avalanche Energy ➀
Peak Diode Recovery dv/dt
TJ
TSTG
Operating Junction
Storage Temperature Range
Lead Temperature
Weight
For footnotes refer to the last page
www.irf.com
MO-036AB
Features:
n Simple Drive Requirements
n Ease of Paralleling
n Hermetically Sealed
n Electrically Isolated
n Dynamic dv/dt Rating
n Light-weight
N-Channel
P-Channel Units
1.0
-1.0
0.6
-0.6
A
4.0
-4.0
1.4
1.4
W
0.011
0.011
W/°C
±20
±20
V
75 ➁
75 ➄
mJ
—
—
A
—
—
mJ
5.5 ➂
-5.5 ➅
-55 to 150
V/ns
o_C
300 (0.63 in./1.6 mm from case for 10s)
1.3 (Typical)
g
1
04/16/02