IRFG110 Datasheet, PDF (1/7 Pages) International Rectifier – POWER MOSFET THRU-HOLE (MO-036AB)

POWER MOSFET
THRU-HOLE (MO-036AB)
Product Summary
Part Number RDS(on) ID
IRFG110
0.7 Ω
1.0A
PD - 90396G
IRFG110
JANTX2N7334
JANTXV2N7334
REF:MIL-PRF-19500/597
100V, QUAD N-CHANNEL
HEXFET^® MOSFET TECHNOLOGY
HEXFET^® MOSFET technology is the key to International
Rectifier’s advanced line of power MOSFET transistors. The
efficient geometry design achieves very low on-state re-
sistance combined with high transconductance. HEXFET
transistors also feature all of the well-established advan-
tages of MOSFETs, such as voltage control, very fast switch-
ing, ease of paralleling and electrical parameter temperature
stability. They are well-suited for applications such as switch-
ing power supplies, motor controls, inverters, choppers,
audio amplifiers, high energy pulse circuits, and virtually
any application where high reliability is required. The
HEXFET transistor’s totally isolated package eliminates the
need for additional isolating material between the device
and the heatsink. This improves thermal efficiency and
reduces drain capacitance.
MO-036AB
Features:
n Simple Drive Requirements
n Ease of Paralleling
n Hermetically Sealed
n Electrically Isolated
n Dynamic dv/dt Rating
n Light-weight
Absolute Maximum Ratings
ID @ VGS = 10V, TC = 25°C
ID @ VGS = 10V, TC = 100°C
IDM
PD @ TC = 25°C
Parameter
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current ➀
Max. Power Dissipation
Linear Derating Factor
VGS
EAS
IAR
EAR
dv/dt
Gate-to-Source Voltage
Single Pulse Avalanche Energy ➁
Avalanche Current ➀
Repetitive Avalanche Energy ➀
Peak Diode Recovery dv/dt ➂
TJ
TSTG
Operating Junction
Storage Temperature Range
Lead Temperature
Weight
Units
1.0
0.6
A
4.0
1.4
W
0.011
W/°C
±20
V
75
mJ
—
A
—
mJ
5.5
-55 to 150
V/ns
o_C
300 (0.63 in./1.6 mm from case for 10s)
1.3 (Typical)
g
For footnotes refer to the last page
www.irf.com
1
04/16/02