IRFD214 Datasheet, PDF (1/8 Pages) International Rectifier – Power MOSFET(Vdss=250V, Rds(on)=2.0ohm, Id=0.45A)

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HEXFET^® Power MOSFET
Dynamic dv/dt Rating
Repetitive Avalanche Rated
For Automatic Insertion
End Stackable
Fast Switching
Ease of paralleling
Simple Drive Requirements
PD -9.1271
IRFD214
V_DSS = 250V
R_DS(on) = 2.0Ω
I_D = 0.45A
Description
Third Generation HEXFETs from International Rectifier provide the designer
with the best combination of fast switching, ruggedized device design, low on-
resistance and cost-effectiveness.
The 4-pin DIP package is a low-cost machine-insertable case style which can be
stacked in multiple combinations on standard 0.1 inch pin centers. The dual drain
serves as a thermal link to the mounting surface for power dissipation levels up to
1 watt.
HD-1
Absolute Maximum Ratings
I_D @ T_C = 25°C
I_D @ T_C = 100°C
I_DM
P_D @T_C = 25°C
V_GS
E_AS
I_AR
E_AR
dv/dt
T_J
T_STG
Parameter
Continuous Drain Current, V_GS @ 10 V
Continuous Drain Current, V_GS @ 10 V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Max.
0.45
0.29
3.6
1.0
0.0083
±20
57
0.45
0.10
4.8
-55 to + 150
300 (1.6mm from case)
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
°C
Thermal Resistance
R_θJA
Parameter
Junction-to-Ambient
Min.
—
Typ.
—
Max. Units
120 °C/W
To Order
Revision 0