IRFC2907B Datasheet, PDF (1/1 Pages) International Rectifier – HEXFET Power MOSFET Die in Wafer Form

PD - 93777
HEXFET^® Power MOSFET Die in Wafer Form
IRFC2907B
l 100% Tested at Probe
D
75V
l Available in Tape and Reel, Chip Pack,
R_DS(on) = 2.5mΩ
Sawn on Film and Gel Pack**
G
l Ultra Low On-Resistance
(typ.) ∗∗∗
6" Wafer
Electrical Characteristics *
S
Parameter
Description
V_(BR)DSS
R_DS(on)***
Drain-to-Source Breakdown Voltage
Static Drain-to-Source On-Resistance
V_GS(th)
I_DSS
I_GSS
T_J
T_STG
Gate Threshold Voltage
Drain-to-Source Leakage Current
Gate-to-Source Leakage Current
Operating Junction and
Storage Temperature Range
Mechanical Data
Min Typ. Max
75V
–––
–––
––– 2.5mΩ 4.5mΩ
2.0
–––
4.0V
–––
––– 20µA
–––
––– ± 200nA
-55°C to 175°C Max.
Test Conditions
V_GS = 0V, I_D = 250µA
V_GS = 10V, I_D = 110A
V_DS = V_GS, I_D = 250µA
V_DS = 75V, V_GS = 0V, T_J = 25°C
V_GS = ±20V
Nominal Back Metal Composition, Thickness:
Nominal Front Metal Composition, Thickness:
Dimensions:
Wafer Diameter:
Wafer Thickness:
Relevant Die Mechanical Drawing Number
Minimum Street Width
Reject Ink Dot Size
Recommended Storage Environment:
Recommended Die Attach Conditions:
Reference Packaged Part
Die Outline
Cr-NiV-Ag ( 1kA°-2kA°-5kA° )
100% Al (0.008 mm)
.257" x .360" [ 6.53 mm x 9.14 mm ]
150 mm, with 100 flat
0.254 mm ± 0.025 mm
01-5403
0.107 mm
0.51 mm Diameter Minimum
Store in original container, in dessicated
nitrogen, with no contamination
For optimum electrical results, die attach
temperature should not exceed 300 °C
IRFP2907
6.53
[.257]
SOURCE SOURCE
9.14
[.360]
0.508
[.020]
GAT E
0.508
[.020]
NOT ES :
1. AL L DIMENS IONS ARE S HOWN IN MILL IMET ERS [INCHES ].
2. CONT ROL L ING DIMENS ION: [INCH].
3. LET T ER DES IGNAT ION:
S = S OURCE S K = S OURCE KELVIN E = EMITT ER
G = GAT E
IS = CURRENT S ENS E
4. DIMENS IONAL T OL ERANCES:
B ONDING PADS :
WIDT H
&
L ENGT H
< 0.635 T OLERANCE = + /- 0.013
< [.0250] T OLERANCE = + /- [.0005]
> 0.635 T OLERANCE = + /- 0.025
> [.0250] T OLERANCE = + /- [.0010]
OVERALL DIE:
WIDT H
&
< 1.270 T OLERANCE = + /- 0.102
< [.050] T OL ERANCE = + /- [.004]
> 1.270 T OLERANCE = + /- 0.203
L ENGT H
> [.050] T OL ERANCE = + /- [.008]
5. UNL ES S OT HERWIS E NOT ED AL L DIE ARE GEN III
* Electrical characteristics are reported for the reference packaged part (see above) and can not be guaranteed in
die sales form. Variations in customer packaging materials, dimensions and processes may affect parametric performance.
** Contact factory for these product forms.
***The typical R_DS(on) is an estimated value for the bare die, actual results will depend on customer packaging materials and
dimensions.
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