IRFC240 Datasheet, PDF (1/1 Pages) International Rectifier – HEXFET Power MOSFET Die in Wafer Form

PD- 91873
HEXFET^® Power MOSFET Die in Wafer Form
D
200 V
Size 4.0
G
Rds(on)=0.18Ω
5" Wafer
S
IRFC240
Electrical Characteristics ( Wafer Form )
Parameter
Description
Guaranteed (Min/Max)
V_(BR)DSS
R_DS(on)
Drain-to-Source Breakdown Voltage
Static Drain-to-Source On-Resistance
200V Min.
0.180Ω Max.
V_GS(th)
I_DSS
I_GSS
T_J
T_STG
Gate Threshold Voltage
Drain-to-Source Leakage Current
Gate-to-Source Leakage
Operating Junction and
Storage Temperature Range
2.3V Min., 4.0V Max.
25µA Max.
± 10µA Max.
125°C Max.
Test Conditions
V_GS = 0V, I_D = 100µA
V_GS = 10V, I_D = 10A
V_DS = V_GS, I_D = 250µA
V_DS = 200V, V_GS = 0V, T_J = 25°C
V_GS = ±20V
Mechanical Data
Nominal Backmetal Composition, Thickness:
Nominal Front Metal Composition, Thickness:
Dimensions:
Wafer Diameter:
Wafer thickness:
Relevant Die Mechanical Dwg. Number
Minimum Street Width
Reject Ink Dot Size
Recommended Storage Environment:
Recommended Die Attach Conditions
Reference Standard IR packaged part ( for design ) : IRF640
Die Outline
Cr-NiV-Ag ( 1kA°-2kA°-2.5kA° )
99% Al, 1% Si (0.004 mm)
0.147" x 0.201" ( 3.73mm x 5.11 mm)
125mm with 100 flat
0.375mm + / -0.020mm
01-5331
0.084 mm
0.51mm Diameter Minimum
Store in original container, in dessicated
nitrogen, with no contamination
For optimum electrical results, die attach
temperature should not exceed 300C
3/23/99