IRFBL10N60A Datasheet, PDF (1/8 Pages) International Rectifier – HEXFET Power MOSFET

PD - 91819C
SMPS MOSFET _IRFBL10N60A
Applications
l Switch Mode Power Supply ( SMPS )
l Uninterruptable Power Supply
l High Speed Power Switching
HEXFET^® Power MOSFET
V_DSS Rds(on) max I_D
600V
0.61Ω
11A
Benefits
l Low Gate Charge Qg results in simple
Drive Requirement
l Improved Gate, Avalanche and Dynamic
dv/dt Ruggedness
l Fully Characterized Capacitance and
Avalanche Voltage and Current
Super-D²Pak^TM
Absolute Maximum Ratings
I_D @ T_C = 25°C
I_D @ T_C = 100°C
I_DM
P_D @T_C = 25°C
V_GS
dv/dt
T_J
T_STG
Parameter
Continuous Drain Current, V_GS @ 10V
Continuous Drain Current, V_GS @ 10V
Pulsed Drain Current 
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery dv/dt ƒ
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Max.
11
7.0
44
180
1.4
± 30
5.0
-55 to + 150
300 (1.6mm from case )
Units
A
W
W/°C
V
V/ns
°C
Applicable Off Line SMPS Topologies:
l Active Clamped Forward
l Main Switch
Notes  through … are on page 8
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