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| IRFBC40S Datasheet, PDF (1/10 Pages) International Rectifier – Power MOSFET(Vdss=600V, Rds(on)=1.2ohm, Id=6.2A) | |||
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l Surface Mount (IRFBC40S)
l Low-profile through-hole (IRFBC40L)
l Available in Tape & Reel (IRFBC40S)
l Dynamic dv/dt Rating
l 150°C Operating Temperature
G
l Fast Switching
l Fully Avalanche Rated
PD - 91016A
IRFBC40S/L
HEXFET® Power MOSFET
D
VDSS = 600V
RDS(on) = 1.2â¦
ID = 6.2A
S
Description
Third generation HEXFETs from international Rectifier provide the designer with the
best combination of fast switching, ruggedized device design, low on-resistance and
cost-effectiveness.
The D2Pak is a surface mount power package capable ofthe accommodatingdie sizes
up to HEX-4. It provides the highest power capability and the lowest possible on-
resistance in any existing surface mount package. The D2Pak is suitable for high
current applications because of its low internal connection resistance and can
dissipate up to 2.0W in a typical surface mount application. The through-hole version
(IRFBC40L) is available for low-profile applications.
D 2 Pak
T O -262
Absolute Maximum Ratings
Parameter
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TA = 25°C
PD @TC = 25°C
Continuous Drain Current, VGS @ 10VÂ
Continuous Drain Current, VGS @ 10VÂ
Pulsed Drain Current ÂÂ
Power Dissipation
Power Dissipation
Linear Derating Factor
VGS
EAS
IAR
EAR
dv/dt
Gate-to-Source Voltage
Single Pulse Avalanche EnergyÂÂ
Avalanche CurrentÂ
Repetitive Avalanche EnergyÂ
Peak Diode Recovery dv/dt ÂÂ
TJ
TSTG
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Thermal Resistance
Parameter
RθJC
Junction-to-Case
RθJA
Junction-to-Ambient ( PCB Mounted,steady-state)**
Max.
6.2
3.9
25
3.1
130
1.0
± 20
570
6.2
13
3.0
-55 to + 150
300 (1.6mm from case )
Typ.
âââ
âââ
Max.
1.0
40
Units
A
W
W
W/°C
V
mJ
A
mJ
V/ns
°C
Units
°C/W
9/27/01
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