IRFBA32N50K Datasheet, PDF (1/3 Pages) International Rectifier – HEXFET® Power MOSFET

PD- 93924
PROVISIONAL _IRFBA32N50K
SMPS MOSFET _{HEXFET® Power MOSFET}
Applications
l Telecom and Data-Com off-Line SMPS
V_DSS
R_DS(on)
I_D
l UninterruptIble Power Supply
Benefits
l Low On-Resistance
500V
0.14Ω
32A
l High Speed Switching
l Low Gate Drive Current Due to Improved
Gate Charge Characteristics
l Improved Avalanche Ruggedness and
Dynamic dv/dt, Fully Characterized
Avalanche Voltage and Current
Super-220™
Absolute Maximum Ratings
I_D @ T_C = 25°C
I_D @ T_C = 100°C
I_DM
P_D @T_C = 25°C
V_GS
dv/dt
T_J
T_STG
Parameter
Continuous Drain Current, V_GS @ 10V
Continuous Drain Current, V_GS @ 10V
Pulsed Drain Current 
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery dv/dt ƒ
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
(1.6mm from case )
Recommended clip force
Max.
32
20
128
360
2.9
± 30
5.0
-55 to + 150
300
20
Units
A
W
W/°C
V
V/ns
°C
N
Diode Characteristics
Symbol
Parameter
I_S
Continuous Source Current
(Body Diode)
ISM
Pulsed Source Current
(Body Diode) 
V_SD
Diode Forward Voltage
t_rr
Reverse Recovery Time
Q_rr
Reverse RecoveryCharge
t_on
Forward Turn-On Time
Min. Typ. Max. Units
Conditions
MOSFET symbol
D
––– ––– 32
A ^{showing the}
integral reverse
G
––– ––– 128
p-n junction diode.
S
––– ––– 1.5 V T_J = 25°C, I_S = 32A, V_GS = 0V „
––– 650 ––– ns T_J = 125°C, I_F = 32A
––– 9.0 ––– µC di/dt = 100A/µs „
Intrinsic turn-on time is negligible (turn-on is dominated by L_S+L_D)
Typical SMPS Topologies
l Hard Switching Full and Half Bridge Circuits
l Hard Switching Single Transistor Circuits
l Power Factor Correction Circuits
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