IRFB59N10D Datasheet, PDF (1/11 Pages) International Rectifier – Power MOSFET(Vdss=100V, Rds(on)max=0.025ohm, Id=59A)

PD - 93890
SMPS MOSFET
IRFB59N10D
IRFS59N10D
IRFSL59N10D
HEXFET^® Power MOSFET
Applications
l High frequency DC-DC converters
V_DSS R_DS(on) max
I_D
100V
0.025Ω
59A
Benefits
l Low Gate-to-Drain Charge to Reduce
Switching Losses
l Fully Characterized Capacitance Including
Effective C_OSS to Simplify Design, (See
App. Note AN1001)
l Fully Characterized Avalanche Voltage
and Current
TO-220AB
IRFB59N10D
D²Pak
TO-262
IRFS59N10D IRFSL59N10D
Absolute Maximum Ratings
I_D @ T_C = 25°C
I_D @ T_C = 100°C
I_DM
P_D @T_A = 25°C
P_D @T_C = 25°C
V_GS
dv/dt
T_J
T_STG
Parameter
Continuous Drain Current, V_GS @ 10V
Continuous Drain Current, V_GS @ 10V
Pulsed Drain Current 
Power Dissipation ‡
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery dv/dt ƒ
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torqe, 6-32 or M3 screw†
Typical SMPS Topologies
l Half-bridge and Full-bridge DC-DC Converters
l Full-bridge Inverters
Notes  through ‡ are on page 11
www.irf.com
Max.
59
42
236
3.8
200
1.3
± 30
3.3
-55 to + 175
300 (1.6mm from case )
10 lbf•in (1.1N•m)
Units
A
W
W/°C
V
V/ns
°C
1
4/17/00