IRFB5615PBF Datasheet, PDF (1/7 Pages) International Rectifier – DIGITAL AUDIO MOSFET

DIGITAL AUDIO MOSFET
PD - 96173
IRFB5615PbF
Features
• Key Parameters Optimized for Class-D Audio
Amplifier Applications
• Low R_DSON for Improved Efficiency
• Low Q_G and Q_SW for Better THD and Improved
Efficiency
• Low Q_RR for Better THD and Lower EMI
• 175°C Operating Junction Temperature for
Ruggedness
• Can Deliver up to 300W per Channel into 4Ω Load in
Half-Bridge Configuration Amplifier
Key Parameters
V_DS
R_DS(ON) typ. @ 10V
150
V
32
m:
Q_g typ.
26
nC
Q_sw typ.
11
nC
R_G(int) typ.
2.7
Ω
T_J max
175
°C
D
D
G
S
S
D
G
TO-220AB
G
D
S
Gate
Drain
Source
Description
This Digital Audio MOSFET is specifically designed for Class-D audio amplifier applications. This MOSFET utilizes
the latest processing techniques to achieve low on-resistance per silicon area. Furthermore, Gate charge, body-diode
reverse recovery and internal Gate resistance are optimized to improve key Class-D audio amplifier performance
factors such as efficiency, THD and EMI. Additional features of this MOSFET are 175°C operating junction
temperature and repetitive avalanche capability. These features combine to make this MOSFET a highly efficient,
robust and reliable device for ClassD audio amplifier applications.
Absolute Maximum Ratings
V_DS
V_GS
I_D @ T_C = 25°C
I_D @ T_C = 100°C
I_DM
P_D @T_C = 25°C
P_D @T_C = 100°C
T_J
T_STG
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, V_GS @ 10V
c ^{Continuous Drain Current, VGS @ 10V}
Pulsed Drain Current
f Power Dissipation
f Power Dissipation
Linear Derating Factor
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
(1.6mm from case)
Mounting torque, 6-32 or M3 screw
Thermal Resistance
R_θJC
f ^Parameter
Junction-to-Case
R_θCS
R_θJA
f ^{Case-to-Sink, Flat, Greased Surface}
Junction-to-Ambient
Notes  through … are on page 2
www.irf.com
Max.
150
±20
35
25
140
144
72
0.96
-55 to + 175
300
x x 10lb in (1.1N m)
Typ.
–––
0.50
–––
Max.
1.045
–––
62
Units
V
A
W
W/°C
°C
Units
°C/W
1
09/05/08