IRFB4410ZGPBF Datasheet, PDF (1/8 Pages) International Rectifier – HEXFETPower MOSFET

PD - 96213
Applications
l High Efficiency Synchronous Rectification in SMPS
l Uninterruptible Power Supply
l High Speed Power Switching
G
l Hard Switched and High Frequency Circuits
Benefits
l Improved Gate, Avalanche and Dynamic dV/dt
Ruggedness
l Fully Characterized Capacitance and Avalanche
SOA
l Enhanced body diode dV/dt and dI/dt Capability
l Lead-Free
l Halogen-Free
IRFB4410ZGPbF
HEXFET^® Power MOSFET
D _VDSS
R_DS(on) typ.
max.
S ^ID (Silicon Limited)
100V
7.2m:
9.0m:
97A
D
G
Gate
DS
G
TO-220AB
IRFB4410ZGPbF
D
Drain
S
Source
Absolute Maximum Ratings
Symbol
Parameter
I_D @ T_C = 25°C
Continuous Drain Current, V_GS @ 10V (Silicon Limited)
I_D @ T_C = 100°C
I_DM
Continuous Drain Current, VGS @ 10V (Silicon Limited)
™ Pulsed Drain Current
P_D @T_C = 25°C _{Maximum Power Dissipation}
Linear Derating Factor
V_GS
dv/dt
Gate-to-Source Voltage
e Peak Diode Recovery
T_J
Operating Junction and
T_STG
Storage Temperature Range
Soldering Temperature, for 10 seconds
(1.6mm from case)
Mounting torque, 6-32 or M3 screw
Avalanche Characteristics
d E_{AS (Thermally limited)} Single Pulse Avalanche Energy
Ù I_AR
Avalanche Current
™ E_AR
Repetitive Avalanche Energy
Thermal Resistance
Symbol
R_θJC
Parameter
i Junction-to-Case
R_θCS
Case-to-Sink, Flat Greased Surface , TO-220
R_θJA
Junction-to-Ambient, TO-220
www.irf.com
Max.
97
69
390
230
1.5
± 20
16
-55 to + 175
300
x x 10lbf in (1.1N m)
242
See Fig. 14, 15, 22a, 22b,
Typ.
–––
0.50
–––
Max.
0.65
–––
62
Units
A
W
W/°C
V
V/ns
°C
mJ
A
mJ
Units
°C/W
1
01/06/09