IRFB41N15DPBF_15 Datasheet, PDF (1/13 Pages) International Rectifier – High frequency DC-DC converters

Applications
l High frequency DC-DC converters
l Lead-Free
Benefits
l Low Gate-to-Drain Charge to Reduce
Switching Losses
l Fully Characterized Capacitance Including
Effective C_OSS to Simplify Design, (See
App. Note AN1001)
l Fully Characterized Avalanche Voltage
and Current
V_DSS
150V
PD - 94927A
IRFB41N15DPbF
IRFIB41N15DPbF
IRFS41N15DPbF
IRFSL41N15DPbF
HEXFET^® Power MOSFET
R_DS(on) max
I_D
0.045:
41A
TO-220AB TO-220 FullPak D²Pak
TO-262
IRFB41N15D IRFIB41N15D IRFS41N15D IRFSL41N15D
Absolute Maximum Ratings
Parameter
I_D @ T_C = 25°C Continuous Drain Current, V_GS @ 10V
I_D @ T_C = 100°C Continuous Drain Current, V_GS @ 10V
I_DM
c Pulsed Drain Current
P_D @T_A = 25°C _{Power Dissipation, D}²_Pak
P_D @T_C = 25°C _{Power Dissipation, TO-220}
P_D @T_C = 25°C Power Dissipation, Fullpak
Linear Derating Factor, TO-220
Linear Derating Factor, Fullpak
V_GS
dv/dt
T_J
T_STG
Gate-to-Source Voltage
e Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 screw
Thermal Resistance
Parameter
R_θJC
Junction-to-Case
R_θJC
Junction-to-Case, Fullpak
R_θcs
h Case-to-Sink, Flat, Greased Surface
R_θJA
h Junction-to-Ambient, TO-220
R_θJA
i Junction-to-Ambient, D²Pak
R_θJA
Junction-to-Ambient, Fullpak
Notes  through ‡ are on page 12
www.irf.com
Max.
41
29
164
3.1
200
48
1.3
0.32
± 30
2.7
-55 to + 175
300 (1.6mm from case )
1.1(10)
Typ.
–––
–––
0.50
–––
–––
–––
Max.
0.75
3.14
–––
62
40
65
Units
A
W
W/°C
V
V/ns
°C
N•m (lbf•in)
Units
°C/W
1
08/10/06