IRFB4137PBF_15 Datasheet, PDF (1/8 Pages) International Rectifier – High Efficiency Synchronous Rectification in SMPS

Application
 High Efficiency Synchronous Rectification in SMPS
 Uninterruptible Power Supply
High Speed Power Switching
 Hard Switched and High Frequency Circuits
D
G
S
IRFB4137PbF
HEXFET^® Power MOSFET
V_DSS
R_{DS(on) typ.}
max
I_D
300V
56m
69m
38A
Benefits
 Improved Gate, Avalanche and Dynamic dV/dt Ruggedness
 Fully Characterized Capacitance and Avalanche SOA
 Enhanced body diode dV/dt and dI/dt Capability
 Lead-Free, RoHS Compliant
S
D
G
TO-220Pak
G
Gate
D
Drain
S
Source
Base part number Package Type
IRFB4137PbF
TO-220Pak
Standard Pack
Form
Quantity
Tube
50
Orderable Part Number
IRFB4137PbF
I_D @ T_C = 25°C
I_D @ T_C = 100°C
I_DM
P_D @T_C = 25°C
V_GS
dv/dt
T_J
T_STG
Parameter
Continuous Drain Current, V_GS @ 10V
Continuous Drain Current, V_GS @ 10V
Pulsed Drain Current 
Maximum Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
(1.6mm from case)
Mounting Torque, 6-32 or M3 Screw
Avalanche Characteristics
E_{AS (Thermally limited)}
Single Pulse Avalanche Energy 
Thermal Resistance
Parameter
R_JC
Junction-to-Case 
R_CS
Case-to-Sink, Flat Greased Surface
R_JA
Junction-to-Ambient 
Max.
38
27
152
341
2.3
± 20
8.9
-55 to + 175
300
10 lbf·in (1.1 N·m)
414
Typ.
–––
0.50
–––
Max.
0.44
–––
62
Units
A
W
W/°C
V
V/ns
°C
mJ
Units
°C/W
1 www.irf.com © 2012 International Rectifier
October 30, 2012