IRFB4115GPBF Datasheet, PDF (1/8 Pages) International Rectifier – HEXFETPower MOSFET

PD - 96216
Applications
l High Efficiency Synchronous Rectification in SMPS
l Uninterruptible Power Supply
l High Speed Power Switching
G
l Hard Switched and High Frequency Circuits
Benefits
l Improved Gate, Avalanche and Dynamic dV/dt
Ruggedness
l Fully Characterized Capacitance and Avalanche
SOA
l Enhanced body diode dV/dt and dI/dt Capability
l Lead-Free
l Halogen-Free
IRFB4115GPbF
HEXFET^® Power MOSFET
D _VDSS
R_DS(on) typ.
max.
S ^ID (Silicon Limited)
150V
9.3mΩ
11mΩ
104A
D
DS
G
TO-220AB
IRFB4115GPbF
Absolute Maximum Ratings
Symbol
Parameter
I_D @ T_C = 25°C
I_D @ T_C = 100°C
I_DM
P_D @T_C = 25°C
Continuous Drain Current, V_GS @ 10V
™ ^{Continuous Drain Current, VGS @ 10V}
Pulsed Drain Current
Maximum Power Dissipation
Linear Derating Factor
V_GS
dv/dt
Gate-to-Source Voltage
e Peak Diode Recovery
T_J
T_STG
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
(1.6mm from case)
Mounting torque, 6-32 or M3 screw
Avalanche Characteristics
E_{AS (Thermally limited)}
I_AR
E_AR
d Single Pulse Avalanche Energy
Ù Avalanche Current
™ Repetitive Avalanche Energy
Thermal Resistance
Symbol
R_θJC
Parameter
i Junction-to-Case
R_θCS
Case-to-Sink, Flat Greased Surface
R_θJA
Junction-to-Ambient
www.irf.com
G
Gate
D
Drain
S
Source
Max.
104
74
420
380
2.5
± 20
18
-55 to + 175
300
x x 10lbf in (1.1N m)
220
See Fig. 14, 15, 22a, 22b
Typ.
–––
0.50
–––
Max.
0.40
–––
62
Units
A
W
W/°C
V
V/ns
°C
mJ
A
mJ
Units
°C/W
1
01/06/09