IRFB4110GPBF Datasheet, PDF (1/8 Pages) International Rectifier – HEXFET Power MOSFET

PD - 96214
Applications
l High Efficiency Synchronous Rectification in SMPS
l Uninterruptible Power Supply
l High Speed Power Switching
l Hard Switched and High Frequency Circuits
Benefits
l Improved Gate, Avalanche and Dynamic dv/dt
Ruggedness
l Fully Characterized Capacitance and Avalanche
SOA
l Enhanced body diode dV/dt and dI/dt Capability
l Lead-Free
l Halogen-Free
IRFB4110GPbF
HEXFET^® Power MOSFET
V_DSS
R_DS(on) typ.
max.
I_{D (Silicon Limited)}
I_{D (Package Limited)}
100V
c ^43..57mm::
180A
120A
D
D
G
G
Gate
S
D
G
TO-220AB
S
IRFB4110GPbF
D
Drain
S
Source
Absolute Maximum Ratings
Symbol
Parameter
I_D @ T_C = 25°C _{Continuous Drain Current, VGS @ 10V (Silicon Limited)}
I_D @ T_C = 100°C
I_D @ T_C = 25°C
I_DM
P_D @T_C = 25°C
Continuous Drain Current, V_GS @ 10V (Silicon Limited)
d ^{Continuous Drain Current, VGS @ 10V (Wire Bond Limited)}
Pulsed Drain Current
Maximum Power Dissipation
Linear Derating Factor
V_GS
dv/dt
Gate-to-Source Voltage
f Peak Diode Recovery
T_J
T_STG
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
(1.6mm from case)
Mounting torque, 6-32 or M3 screw
Avalanche Characteristics
e E_{AS (Thermally limited)} Single Pulse Avalanche Energy
Ãd I_AR
Avalanche Current
d E_AR
Repetitive Avalanche Energy
Thermal Resistance
Symbol
R_θJC
Parameter
j Junction-to-Case
R_θCS
Case-to-Sink, Flat Greased Surface
R_θJA
Junction-to-Ambient
www.irf.com
Max.
™ 180
™ 130
120
670
370
2.5
± 20
5.3
-55 to + 175
300
x x 10lbf in (1.1N m)
190
See Fig. 14, 15, 22a, 22b
Typ.
–––
0.50
–––
Max.
0.402
–––
62
Units
A
W
W/°C
V
V/ns
°C
mJ
A
mJ
Units
°C/W
1
01/06/09