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IRFB4103PBF Datasheet, PDF (1/7 Pages) International Rectifier – DIGITAL AUDIO MOSFET
DIGITAL AUDIO MOSFET
PD - 96909
IRFB4103PbF
Features
• Key parameters optimized for Class-D audio
amplifier applications
• Low RDSON for improved efficiency
• Low QG and QSW for better THD and improved
efficiency
• Low QRR for better THD and lower EMI
• 175°C operating junction temperature for
Key Parameters
VDS
RDS(ON) typ. @ 10V
Qg typ.
Qsw typ.
RG(int) typ.
TJ max
200
V
139
m:
25
nC
15
nC
1.0
Ω
175
°C
ruggedness
D
• Can deliver up to 300W per channel into 8Ω load in
half-bridge topology
G
S
TO-220AB
Description
This Digital Audio MOSFET is specifically designed for Class-D audio amplifier applications. This MOSFET utilizes
the latest processing techniques to achieve low on-resistance per silicon area. Furthermore, Gate charge, body-diode
reverse recovery and internal Gate resistance are optimized to improve key Class-D audio amplifier performance
factors such as efficiency, THD and EMI. Additional features of this MOSFET are 175°C operating junction
temperature and repetitive avalanche capability. These features combine to make this MOSFET a highly efficient,
robust and reliable device for ClassD audio amplifier applications.
Absolute Maximum Ratings
Parameter
VDS
VGS
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
PD @TC = 100°C
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current c
Power Dissipation f
Power Dissipation f
TJ
TSTG
Linear Derating Factor
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
(1.6mm from case)
Mounting torque, 6-32 or M3 screw
Max.
200
±30
17
12
68
140
71
0.95
-55 to + 175
300
10lbxin (1.1Nxm)
Units
V
A
W
W/°C
°C
Thermal Resistance
Parameter
RθJC
Junction-to-Case f
RθCS
RθJA
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient f
Notes  through … are on page 2
www.irf.com
Typ.
–––
0.50
–––
Max.
1.05
–––
62
Units
°C/W
1
1/5/05