IRFB3607GPBF Datasheet, PDF (1/8 Pages) International Rectifier –
High Efficiency Synchronous Rectification in SMPS

PD - 96329
Applications
l High Efficiency Synchronous Rectification in
SMPS
l Uninterruptible Power Supply
l High Speed Power Switching
l Hard Switched and High Frequency Circuits
G
Benefits
l Improved Gate, Avalanche and Dynamic
dv/dt Ruggedness
l Fully Characterized Capacitance and
Avalanche SOA
l Enhanced body diode dV/dt and dI/dt
Capability
l Lead-Free
l Halogen-Free
Absolute Maximum Ratings
Symbol
Parameter
I_D @ T_C = 25°C _{Continuous Drain Current, VGS @ 10V}
I_D @ T_C = 100°C
I_DM
Continuous Drain Current, V_GS @ 10V
d Pulsed Drain Current
P_D @T_C = 25°C _{Maximum Power Dissipation}
Linear Derating Factor
V_GS
dv/dt
Gate-to-Source Voltage
f Peak Diode Recovery
T_J
Operating Junction and
T_STG
Storage Temperature Range
Soldering Temperature, for 10 seconds
(1.6mm from case)
Mounting torque, 6-32 or M3 screw
Avalanche Characteristics
e _{EAS (Thermally limited)} Single Pulse Avalanche Energy
Ù _IAR
Avalanche Current
g _EAR
Repetitive Avalanche Energy
Thermal Resistance
Symbol
R_θJC
Parameter
j Junction-to-Case
R_θCS
Case-to-Sink, Flat Greased Surface, TO-220
R_θJA
Junction-to-Ambient, TO-220
IRFB3607GPbF
HEXFET^® Power MOSFET
D
V_DSS
R_DS(on) typ.
max.
S
I_D
75V
7.34m:
9.0m:
80A
D
G
Gate
S
D
G
TO-220AB
IRFB3607GPbF
D
Drain
S
Source
Max.
80™
56™
310
140
0.96
± 20
27
-55 to + 175
300
x x 10lb in (1.1N m)
120
46
14
Typ.
–––
0.50
–––
Max.
1.045
–––
62
Units
A
W
W/°C
V
V/ns
°C
mJ
A
mJ
Units
°C/W
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1
08/12/10