IRFB3256PBF_15 Datasheet, PDF (1/9 Pages) International Rectifier – High Efficiency Synchronous Rectification in SMPS

Applications
l High Efficiency Synchronous Rectification in SMPS
l Uninterruptible Power Supply
G
l High Speed Power Switching
l Hard Switched and High Frequency Circuits
Benefits
l Improved Gate, Avalanche and Dynamic dV/dt
Ruggedness
l Fully Characterized Capacitance and Avalanche
SOA
l Enhanced body diode dV/dt and dI/dt Capability
l Lead-Free
PD - 97727
IRFB3256PbF
HEXFET^® Power MOSFET
D _VDSS
R_DS(on) typ.
max.
60V
2.7mΩ
3.4mΩ
I_{D (Silicon Limited)}
206A
S ^ID _{(Package Limited)}
75A
D
DS
G
TO-220AB
G
Gate
Absolute Maximum Ratings
Symbol
Parameter
I_D @ T_C = 25°C
Continuous Drain Current, V_GS @ 10V (Silicon Limited)
I_D @ T_C = 100°C Continuous Drain Current, V_GS @ 10V (Silicon Limited)
I_D @ T_C = 25°C
I_DM
Continuous Drain Current, V_GS @ 10V (Package Limited)
™ Pulsed Drain Current
P_D @T_C = 25°C _{Maximum Power Dissipation}
Linear Derating Factor
V_GS
dv/dt
Gate-to-Source Voltage
e Peak Diode Recovery
T_J
Operating Junction and
T_STG
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 screw
Avalanche Characteristics
d E_AS
Single Pulse Avalanche Energy (Thermally Limited)
Ù I_AR
Avalanche Current
™ E_AR
Repetitive Avalanche Energy
Thermal Resistance
Symbol
R_θJC
Parameter
ij Junction-to-Case
R_θCS
Case-to-Sink, Flat Greased Surface
R_θJA
Junction-to-Ambient
D
Drain
S
Source
Max.
206
172
75
820
300
2.0
± 20
3.3
-55 to + 175
300 (1.6mm from case)
x x 10lbf in (1.1N m)
340
See Fig. 14, 15, 22a, 22b
Typ.
–––
0.50
–––
Max.
0.50
–––
62
Units
A
W
W/°C
V
V/ns
°C
mJ
A
mJ
Units
°C/W
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1
09/22/11