IRFB3207PBF Datasheet, PDF (1/12 Pages) International Rectifier – HEXFET®Power MOSFET

Applications
l High Efficiency Synchronous Rectification in SMPS
l Uninterruptible Power Supply
l High Speed Power Switching
l Hard Switched and High Frequency Circuits
Benefits
l Improved Gate, Avalanche and Dynamic dV/dt
Ruggedness
l Fully Characterized Capacitance and Avalanche
SOA
l Enhanced body diode dV/dt and dI/dt Capability
l Lead-Free
PD - 95708D
IRFB3207PbF
IRFS3207PbF
IRFSL3207PbF
HEXFET^® Power MOSFET
G
D _VDSS
R_DS(on) typ.
max.
75V
3.6m:
4.5m:
S I_D
170A
DS
G
TO-220AB
IRFB3207PbF
DS
G
D²Pak
IRFS3207PbF
DS
G
TO-262
IRFSL3207PbF
Absolute Maximum Ratings
Symbol
Parameter
I_D @ T_C = 25°C
I_D @ T_C = 100°C
I_DM
P_D @T_C = 25°C
Continuous Drain Current, V_GS @ 10V
Continuous Drain Current, V_GS @ 10V
d Pulsed Drain Current
Maximum Power Dissipation
Linear Derating Factor
V_GS
dV/dt
Gate-to-Source Voltage
f Peak Diode Recovery
T_J
T_STG
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
(1.6mm from case)
Mounting torque, 6-32 or M3 screw
Avalanche Characteristics
E_{AS (Thermally limited)}
I_AR
E_AR
e Single Pulse Avalanche Energy
Ù Avalanche Current
g Repetitive Avalanche Energy
Thermal Resistance
Symbol
R_θJC
Parameter
k Junction-to-Case
R_θCS
R_θJA
R_θJA
Case-to-Sink, Flat Greased Surface , TO-220
k Junction-to-Ambient, TO-220
jk Junction-to-Ambient (PCB Mount) , D²Pak
www.irf.com
Max.
™ 170
™ 120
720
300
2.0
± 20
5.8
-55 to + 175
300
x x 10lb in (1.1N m)
910
See Fig. 14, 15, 16a, 16b,
Typ.
–––
0.50
–––
–––
Max.
0.50
–––
62
40
Units
A
W
W/°C
V
V/ns
°C
mJ
A
mJ
Units
°C/W
1
03/06/06