IRFB3077GPBF Datasheet, PDF (1/8 Pages) International Rectifier – High Efficiency Synchronous Rectification in SMPS

PD - 96200
Applications
l High Efficiency Synchronous Rectification in SMPS
l Uninterruptible Power Supply
l High Speed Power Switching
l Hard Switched and High Frequency Circuits
Benefits
l Worldwide Best R_DS(on) in TO-220
G
l Improved Gate, Avalanche and Dynamic dV/dt
Ruggedness
l Fully Characterized Capacitance and Avalanche
SOA
l Enhanced body diode dV/dt and dI/dt Capability
l Lead-Free
l Halogen-Free
IRFB3077GPbF
HEXFET^® Power MOSFET
D _VDSS
R_DS(on) typ.
max.
I_{D (Silicon Limited)}
75V
2.8m:
3.3m:
c 210A
S ^I_{D (Package Limited)} ^120A
D
S
D
G
TO-220AB
IRFB3077GPbF
G
Gate
Absolute Maximum Ratings
Symbol
Parameter
I_D @ T_C = 25°C Continuous Drain Current, V_GS @ 10V (Silicon Limited)
I_D @ T_C = 100°C Continuous Drain Current, V_GS @ 10V (Silicon Limited)
I_D @ T_C = 25°C
I_DM
Continuous Drain Current, V_GS @ 10V (Wire Bond Limited)
d Pulsed Drain Current
P_D @T_C = 25°C _{Maximum Power Dissipation}
Linear Derating Factor
V_GS
dV/dt
Gate-to-Source Voltage
f Peak Diode Recovery
T_J
Operating Junction and
T_STG
Storage Temperature Range
Soldering Temperature, for 10 seconds
(1.6mm from case)
Mounting torque, 6-32 or M3 screw
Avalanche Characteristics
e E_{AS (Thermally limited)} Single Pulse Avalanche Energy
d I_AR
Avalanche Current
d E_AR
Repetitive Avalanche Energy
Thermal Resistance
Symbol
R_θJC
Parameter
j Junction-to-Case
R_θCS
Case-to-Sink, Flat Greased Surface
R_θJA
Junction-to-Ambient
www.irf.com
D
Drain
S
Source
Max.
c 210
c 150
120
850
370
2.5
± 20
2.5
-55 to + 175
300
x x 10lbf in (1.1N m)
200
See Fig. 14, 15, 22a, 22b,
Typ.
–––
0.50
–––
Max.
0.402
–––
62
Units
A
W
W/°C
V
V/ns
°C
mJ
A
mJ
Units
°C/W
1
12/05/08