IRFB3006PBF Datasheet, PDF (1/8 Pages) International Rectifier – HEXFETPower MOSFET

PD -97143
Applications
l High Efficiency Synchronous Rectification in SMPS
l Uninterruptible Power Supply
l High Speed Power Switching
l Hard Switched and High Frequency Circuits
G
Benefits
l Improved Gate, Avalanche and Dynamic dV/dt
Ruggedness
l Fully Characterized Capacitance and Avalanche
SOA
l Enhanced body diode dV/dt and dI/dt Capability
l Lead-Free
IRFB3006PbF
HEXFET^® Power MOSFET
D _VDSS
R_DS(on) typ.
max.
60V
2.1m:
2.5m:
I_{D (Silicon Limited)} 270A c
S ^ID (Package Limited) ^195A
D
S
D
G
TO-220AB
G
G ate
D
Drain
S
Source
Absolute Maximum Ratings
Symbol
Parameter
I_D @ T_C = 25°C
I_D @ T_C = 100°C
I_D @ T_C = 25°C
I_DM
P_D @T_C = 25°C
Continuous Drain Current, V_GS @ 10V (Silicon Limited)
Continuous Drain Current, V_GS @ 10V (Silicon Limited)
Continuous Drain Current, V_GS @ 10V (Wire Bond Limited)
Pulsed Drain Current d
Maximum Power Dissipation
Linear Derating Factor
V_GS
dv/dt
T_J
T_STG
Gate-to-Source Voltage
Peak Diode Recovery f
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
(1.6mm from case)
Mounting torque, 6-32 or M3 screw
Avalanche Characteristics
E_{AS (Thermally limited)} ^{Single Pulse Avalanche Energy e}
I_AR
Avalanche Current d
E_AR
Repetitive Avalanche Energy g
Thermal Resistance
Symbol
Parameter
R_θJC
R_θCS
R_θJA
Junction-to-Case k
Case-to-Sink, Flat Greased Surface
Junction-to-Ambient jk
www.irf.com
Max.
270c
190 c
195
1080
375
2.5
± 20
10
-55 to + 175
300
10lbxin (1.1Nxm)
320
See Fig. 14, 15, 22a, 22b,
Typ.
–––
0.50
–––
Max.
0.4
–––
62
Units
A
W
W/°C
V
V/ns
°C
mJ
A
mJ
Units
°C/W
1
10/6/08