IRFB3004PBF Datasheet, PDF (1/11 Pages) International Rectifier – HEXFET Power MOSFET

Applications
l High Efficiency Synchronous Rectification in SMPS
D
l Uninterruptible Power Supply
l High Speed Power Switching
l Hard Switched and High Frequency Circuits
G
Benefits
l Improved Gate, Avalanche and Dynamic dV/dt
S
Ruggedness
l Fully Characterized Capacitance and Avalanche
SOA
D
l Enhanced body diode dV/dt and dI/dt Capability
l Lead-Free
DS
G
TO-220AB
IRFB3004PbF
PD - 97377
IRFB3004PbF
IRFS3004PbF
IRFSL3004PbF
HEXFET^® Power MOSFET
V_DSS
R_DS(on)
typ.
max.
I_{D (Silicon Limited)}
I_{D (Package Limited)}
40V
1.4mΩ
1.75mΩ
340Ac
195A
D
D
S
G
D²Pak
IRFS3004PbF
S
D
G
TO-262
IRFSL3004PbF
G
G ate
Absolute Maximum Ratings
Symbol
Parameter
I_D @ T_C = 25°C
I_D @ T_C = 100°C
I_D @ T_C = 25°C
I_DM
P_D @T_C = 25°C
Continuous Drain Current, V_GS @ 10V (Silicon Limited)
Continuous Drain Current, V_GS @ 10V (Silicon Limited)
Continuous Drain Current, V_GS @ 10V (Wire Bond Limited)
Pulsed Drain Current d
Maximum Power Dissipation
Linear Derating Factor
V_GS
Gate-to-Source Voltage
dv/dt
Peak Diode Recovery f
T_J
T_STG
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds (1.6mm from case)
Mounting torque, 6-32 or M3 screw
Avalanche Characteristics
E_{AS (Thermally limited)} ^{Single Pulse Avalanche Energy e}
I_AR
Avalanche Current d
E_AR
Repetitive Avalanche Energy d
Thermal Resistance
Symbol
Parameter
R_θJC
R_θCS
R_θJA
R_θJA
Junction-to-Case kl
Case-to-Sink, Flat Greased Surface, TO-220
Junction-to-Ambient, TO-220
Junction-to-Ambient (PCB Mount) , D²Pak j
www.irf.com
D
Drain
Max.
340c
240c
195
1310
380
2.5
± 20
4.4
-55 to + 175
300
10lbfxin (1.1Nxm)
S
Source
Units
A
W
W/°C
V
V/ns
°C
300
See Fig. 14, 15, 22a, 22b
Typ.
–––
0.50
–––
–––
Max.
0.40
–––
62
40
mJ
A
mJ
Units
°C/W
1
02/26/09