IRFB260N Datasheet, PDF (1/8 Pages) International Rectifier – Power MOSFET(Vdss=200V, Rds(on)max=0.040ohm, Id=56A)

PD - 94270
SMPS MOSFET _IRFB260N
HEXFET^® Power MOSFET
Applications
l High frequency DC-DC converters
V_DSS R_DS(on) max
I_D
200V
0.040Ω
56A
Benefits
l Low Gate-to-Drain Charge to Reduce Switching Losses
l Fully Characterized Capacitance Including Effective C_OSS to
Simplify Design, (See App. Note AN1001)
l Fully Characterized Avalanche Voltage and Current
TO-220AB
Absolute Maximum Ratings
I_D @ T_C = 25°C
I_D @ T_C = 100°C
I_DM
P_D @T_C = 25°C
V_GS
dv/dt
T_J
T_STG
Parameter
Continuous Drain Current, V_GS @ 10V
Continuous Drain Current, V_GS @ 10V
Pulsed Drain Current 
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery dv/dt ƒ
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torqe, 6-32 or M3 screw
Max.
56
40
220
380
2.5
± 20
10
-55 to + 175
300 (1.6mm from case )
10 lbf•in (1.1N•m)
Units
A
W
W/°C
V
V/ns
°C
Thermal Resistance
R_θJC
R_θCS
R_θJA
Parameter
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
Typ.
–––
0.50
–––
Max.
0.40
–––
62
Units
°C/W
Notes  through … are on page 8
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8/29/01