IRFB16N50K Datasheet, PDF (1/8 Pages) International Rectifier – SMPS MOSFET

PD - 95855
SMPS MOSFET ^IRFB16N50K
Applications
l Switch Mode Power Supply (SMPS)
l Uninterruptible Power Supply
l High Speed Power Switching
l Hard Switched and High Frequency
Circuits
Benefits
l Low Gate Charge Qg results in Simple Drive
Requirement
l Improved Gate, Avalanche and Dynamic dv/dt
Ruggedness
l Fully Characterized Capacitance and Avalanche
Voltage and Current
l Low R_DS(on)
Absolute Maximum Ratings
Parameter
I_D @ T_C = 25°C Continuous Drain Current, VGS @ 10V
c ^{ID @ TC = 100°C Continuous Drain Current, VGS @ 10V}
I_DM
Pulsed Drain Current
P_D @T_C = 25°C Power Dissipation
V_GS
dv/dt
T_J
T_STG
Linear Derating Factor
Gate-to-Source Voltage
e Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torqe, 6-32 or M3 screw
HEXFET^® Power MOSFET
V_DSS R_DS(on) typ. I_D
500V
285m:
17A
S
D
G
TO-220AB
Max.
17
11
68
280
2.3
± 30
8.0
-55 to + 150
300 (1.6mm from case )
y y 10 lbf in (1.1N m)
Units
A
W
W/°C
V
V/ns
°C
Avalanche Characteristics
E_AS
I_AR
E_AR
Parameter
d Single Pulse Avalanche Energy
Ãc Avalanche Current
c Repetitive Avalanche Energy
Typ.
–––
–––
–––
Max.
310
17
28
Units
mJ
A
mJ
Thermal Resistance
Parameter
R_θJC
R_θCS
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
R_θJA
Junction-to-Ambient
www.irf.com
Typ.
–––
0.50
–––
Max.
0.44
–––
62
Units
°C/W
1
03/11/04