IRF9Z34NS Datasheet, PDF (1/10 Pages) International Rectifier – Power MOSFET(Vdss=-55V, Rds(on)=0.10ohm, Id=-19A)

l Advanced Process Technology
l Surface Mount (IRF9Z34NS)
l Low-profile through-hole (IRF9Z34NL)
l 175°C Operating Temperature
l Fast Switching
G
l P-Channel
l Fully Avalanche Rated
Description
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This
benefit, combined with the fast switching speed and
ruggedized device design that HEXFET Power MOSFETs
are well known for, provides the designer with an extremely
efficient and reliable device for use in a wide variety of
applications.
The D²Pak is a surface mount power package capable of
accommodating die sizes up to HEX-4. It provides the
highest power capability and the lowest possible on-
resistance in any existing surface mount package. The
D²Pak is suitable for high current applications because of
its low internal connection resistance and can dissipate
up to 2.0W in a typical surface mount application.
The through-hole version (IRF9Z34NL) is available for low-
profile applications.
Absolute Maximum Ratings
Parameter
I_D @ T_C = 25°C
I_D @ T_C = 100°C
I_DM
P_D @T_A = 25°C
P_D @T_C = 25°C
Continuous Drain Current, V_GS @ -10V…
Continuous Drain Current, V_GS @ -10V…
Pulsed Drain Current …
Power Dissipation
Power Dissipation
Linear Derating Factor
V_GS
E_AS
I_AR
E_AR
dv/dt
Gate-to-Source Voltage
Single Pulse Avalanche Energy‚…
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt ƒ…
T_J
T_STG
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Thermal Resistance
Parameter
RθJC
Junction-to-Case
R_θJA
Junction-to-Ambient ( PCB Mounted,steady-state)**
PD - 9.1525
IRF9Z34NS/L
HEXFET^® Power MOSFET
D
V_DSS = -55V
R_DS(on) = 0.10Ω
I_D = -19A
S
D ² Pak
T O -262
Max.
-19
-14
-68
3.8
68
0.45
± 20
180
-10
6.8
-5.0
-55 to + 175
300 (1.6mm from case )
Typ.
–––
–––
Max.
2.2
40
Units
A
W
W
W/°C
V
mJ
A
mJ
V/ns
°C
Units
°C/W
8/25/97