IRF9953PBF Datasheet, PDF (1/7 Pages) International Rectifier – HEXFET® Power MOSFET

PD - 95477
IRF9953PbF
l Generation V Technology
l Ultra Low On-Resistance
l Dual P-Channel MOSFET
l Surface Mount
l Very Low Gate Charge and
Switching Losses
l Fully Avalanche Rated
l Lead-Free
Description
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This
benefit, combined with the fast switching speed and
ruggedized device design that HEXFET Power
MOSFETs are well known for, provides the designer
with an extremely efficient and reliable device for use
in a wide variety of applications.
HEXFET^® Power MOSFET
S1
1
G1
2
S2
3
G2
4
8
D1
7
D1
6
D2
5
D2
Top View
V_DSS = -30V
R_DS(on) = 0.25Ω
Recommended upgrade: IRF7306 or IRF7316
Lower profile/smaller equivalent: IRF7506
The SO-8 has been modified through a customized
leadframe for enhanced thermal characteristics and
multiple-die capability making it ideal in a variety of
power applications. With these improvements, multiple
devices can be used in an application with dramatically
reduced board space. The package is designed for
vapor phase, infra red, or wave soldering techniques.
SO-8
Absolute Maximum Ratings ( T_A = 25°C Unless Otherwise Noted)
Symbol
Maximum
Drain-Source Voltage
V_DS
Gate-Source Voltage
V_GS
Continuous Drain Current…
T_A = 25°C
T_A = 70°C
I_D
Pulsed Drain Current
I_DM
Continuous Source Current (Diode Conduction)
I_S
Maximum Power Dissipation …
T_A = 25°C
T_A = 70°C
P_D
Single Pulse Avalanche Energy
E_AS
-30
± 20
-2.3
-1.8
-10
1.6
2.0
1.3
57
Avalanche Current
I_AR
-1.3
Repetitive Avalanche Energy
Peak Diode Recovery dv/dtƒ
E_AR
dv/dt
0.20
-5.0
Junction and Storage Temperature Range
T_J, T_STG
-55 to + 150
Units
V
A
W
mJ
A
mJ
V/ ns
°C
Thermal Resistance Ratings
Parameter
Maximum Junction-to-Ambient…
Symbol
R_θJA
Limit
62.5
Units
°C/W
7/16/04