IRF9952QTRPBF Datasheet, PDF (1/10 Pages) International Rectifier – Advanced Process Technology

PD - 96115A
IRF9952QPbF
l Advanced Process Technology
l Ultra Low On-Resistance
l Dual N and P Channel MOSFET
l Surface Mount
l Available in Tape & Reel
l 150°C Operating Temperature
l Lead-Free
HEXFET^® Power MOSFET
N-CHANNEL MOSFET
S1
1
8
D1
G1
2
7
D1
S2
3
6
D2
G2
4
5
D2
P-CHANNEL MOSFET
Top View
N-Ch P-Ch
V_DSS 30V -30V
R_DS(on) 0.10Ω 0.25Ω
Description
These HEXFET^® Power MOSFET's in a Dual SO-8
package utilize the lastest processing techniques to
achieve extremely low on-resistance per silicon
area. Additional features of these HEXFET Power
MOSFET's are a 150°C junction operating
temperature, fast switching speed and improved
repetitive avalanche rating. These benefits combine
to make this design an extremely efficient and reliable
device for use in a wide variety of applications.
The efficient SO-8 package provides enhanced
thermal characteristics and dual MOSFET die
capability making it ideal in a variety of power
applications. This dual, surface mount SO-8 can
dramatically reduce board space and is also
available in Tape & Reel.
SO-8
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current…
Pulsed Drain Current
T_A = 25°C
T_A = 70°C
Continuous Source Current (Diode Conduction)
Maximum Power Dissipation …
Single Pulse Avalanche Energy
T_A = 25°C
T_A = 70°C
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt ‚
Junction and Storage Temperature Range
Symbol
V_DS
V_GS
I_D
I_DM
I_S
P_D
E_AS
I_AR
E_AR
dv/dt
T_J, T_STG
Maximum
N-Channel P-Channel
30
± 20
3.5
-2.3
2.8
-1.8
16
-10
1.7
-1.3
2.0
1.3
44
57
2.0
-1.3
0.25
5.0
-5.0
-55 to + 150
Units
V
A
W
mJ
A
mJ
V/ ns
°C
Thermal Resistance Ratings
Parameter
Maximum Junction-to-Ambient …
www.irf.com
Symbol
R_θJA
Limit
62.5
Units
°C/W
1
08/09/10