IRF9540NSPBF Datasheet, PDF (1/11 Pages) International Rectifier – HEXFET POWER MOSFET (VDSS = -100V , RDS(on) = 117mΩ , ID = -23A )

PD - 96030
l Advanced Process Technology
l Ultra Low On-Resistance
l 150°C Operating Temperature
l Fast Switching
l Repetitive Avalanche Allowed up to Tjmax
l Some Parameters are Different from
IRF9540NS/L
l P-Channel
l Lead-Free
Description
Features of this design are a 150°C junction
operating temperature, fast switching speed and
improved repetitive avalanche rating . These fea-
tures combine to make this design an extremely
efficient and reliable device for use in a wide
variety of other applications.
IRF9540NSPbF
IRF9540NLPbF
HEXFET^® Power MOSFET
D
V_DSS = -100V
R_DS(on) = 117mΩ
G
S
I_D = -23A
D
D
S
D
G
D²Pak
IRF9540NSPbF
S
D
G
TO-262
IRF9540NLPbF
G
Gate
Absolute Maximum Ratings
Parameter
I_D @ T_C = 25°C
I_D @ T_C = 100°C
I_DM
P_D @T_A = 25°C
P_D @T_C = 25°C
Continuous Drain Current, V_GS @ -10V
Continuous Drain Current, VGS @ -10V
c Pulsed Drain Current
Maximum Power Dissipation
Maximum Power Dissipation
V_GS
E_AS
I_AR
E_AR
dv/dt
T_J
T_STG
Linear Derating Factor
Gate-to-Source Voltage
d Single Pulse Avalanche Energy
c Avalanche Current
c Repetitive Avalanche Energy
e Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Thermal Resistance
Parameter
R_θJC
R_θJA
www.irf.com
Junction-to-Case
g Junction-to-Ambient (PCB Mount, steady state)
D
Drain
Max.
-23
-14
-92
3.1
110
0.9
± 20
84
-14
11
-13
-55 to + 150
300 (1.6mm from case )
Typ.
–––
–––
Max.
1.1
40
S
Source
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
°C
Units
°C/W
1
09/30/05