IRF9520NSTRL Datasheet, PDF (1/11 Pages) International Rectifier – Advanced Process Technology

l Advanced Process Technology
l Surface Mount (IRF9520S)
l Low-profile through-hole (IRF9520L)
l 175°C Operating Temperature
l Fast Switching
G
l P-Channel
l Fully Avalanche Rated
Description
Fifth Generation HEXFETs from International Rectifier utilize
advanced processing techniques to achieve extremely low
on-resistance per silicon area. This benefit, combined with
the fast switching speed and ruggedized device design that
HEXFET Power MOSFETs are well known for, provides the
designer with an extremely efficient and reliable device for
use in a wide variety of applications.
The D²Pak is a surface mount power package capable of
accommodating die sizes up to HEX-4. It provides the highest
power capability and the lowest possible on-resistance in
any existing surface mount package. The D²Pak is suitable
for high current applications because of its low internal
connection resistance and can dissipate up to 2.0W in a
typical surface mount application.
The through-hole version (IRF9520L) is available for low-
profile applications.
Absolute Maximum Ratings
I_D @ T_C = 25°C
I_D @ T_C = 100°C
I_DM
P_D @T_A = 25°C
P_D @T_C = 25°C
V_GS
E_AS
I_AR
E_AR
dv/dt
T_J
T_STG
Parameter
Continuous Drain Current, V_GS @ -10V…
Continuous Drain Current, V_GS @ -10V…
Pulsed Drain Current …
Power Dissipation
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy‚…
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt ƒ…
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Thermal Resistance
R_θJC
R_θJA
Parameter
Junction-to-Case
Junction-to-Ambient ( PCB Mounted,steady-state)**
PD -91522A
IRF9520NS/L
HEXFET^® Power MOSFET
D
V_DSS = -100V
R_DS(on) = 0.48Ω
I_D = -6.8A
S
D ² Pak
T O -26 2
Max.
-6.8
-4.8
-27
3.8
48
0.32
± 20
140
-4.0
4.8
-5.0
-55 to + 175
300 (1.6mm from case )
Typ.
–––
–––
Max.
3.1
40
Units
A
W
W
W/°C
V
mJ
A
mJ
V/ns
°C
Units
°C/W
5/13/98