IRF9395MPBF_15 Datasheet, PDF (1/9 Pages) International Rectifier – Isolation Switch for Input Power or Battery Application

IRF9395MPbF
DirectFET™ dual P-Channel Power MOSFET ‚
Typical values (unless otherwise specified)
V_DSS
V_GS
R_DS(on)
R_DS(on)
Applications
l Isolation Switch for Input Power or Battery Application
-30V max ±20V max 5.3mΩ@-10V 9.0mΩ@-4.5V
Q_{g tot} Q_gd
Q_gs2
Q_rr
Q_oss V_gs(th)
Features and Benefits
l Environmentaly Friendly Product
32nC
15nC 3.2nC
Q1-Q2
62nC
23nC
-1.8V
l RoHs Compliant Containing no Lead,
no Bromide and no Halogen
l Dual Common-Drain P-Channel MOSFETs Provides
High Level of Integration and Very Low RDS(on)
G
S
D
S
G
S
D
S
MC
DirectFET™ ISOMETRIC
Applicable DirectFET Outline and Substrate Outline (see p.7,8 for details)
SQ
SX
ST
MQ
MX
MT
MP
MC
Description
The IRF9395MTRPbF combines the latest HEXFET® P-Channel Power MOSFET Silicon technology with the advanced
DirectFET^TM packaging to achieve the lowest on-state resistance in a package that has the footprint of a SO-8 and only 0.6 mm
profile. The DirectFET package is compatible with existing layout geometries used in power applications, PCB assembly equipment
and vapor phase, infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the
manufacturing methods and processes. The DirectFET package allows dual sided cooling to maximize thermal transfer in power
systems, improving previous best thermal resistance by 80%.
Orderable part number
IRF9395MTRPbF
IRF9395MTR1PbF
Package Type
DirectFET Medium Can
DirectFET Medium Can
Standard Pack
Form
Quantity
Tape and Reel
4800
Tape and Reel
1000
Note
"TR" suffix
"TR1" suffix EOL notice # 264
Absolute Maximum Ratings
Parameter
V_DS
Drain-to-Source Voltage
V_GS
I_D @ T_A = 25°C
I_D @ T_A = 70°C
I_D @ T_C = 25°C
I_DM
Gate-to-Source Voltage
e Continuous Drain Current, V_GS @ 10V
e Continuous Drain Current, V_GS @ 10V
f Continuous Drain Current, V_GS @ 10V
g Pulsed Drain Current
Max.
-30
±20
-14
-11
-75
-110
Units
V
A
24
20
ID = -14A
16
12
TJ = 125°C
8
4
TJ = 25°C
0
2 4 6 8 10 12 14 16 18 20
-VGS, Gate -to -Source Voltage (V)
Fig 1. Typical On-Resistance vs. Gate Voltage
Notes:
 Click on this section to link to the appropriate technical paper.
‚ Click on this section to link to the DirectFET Website.
ƒ Surface mounted on 1 in. square Cu board, steady state.
14.0
12.0 ^{ID= -11A}
10.0
8.0
VDS= -24V
VDS= -15V
VDS= -6V
6.0
4.0
2.0
0.0
0
20
40
60
80
QG Total Gate Charge (nC)
Fig 2. Typical Total Gate Charge vs Gate-to-Source Voltage
„ T_C measured with thermocouple mounted to top (Drain) of part.
… Repetitive rating; pulse width limited by max. junction temperature.
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February 24, 2014