IRF8721PBF_15 Datasheet, PDF (1/9 Pages) International Rectifier – Control MOSFET for Isolated DC-DC Converters in Networking Systems

PD - 97119
IRF8721PbF
Applications
l Control MOSFET of Sync-Buck
Converters used for Notebook Processor
Power
HEXFET^® Power MOSFET
V_DSS R_DS(on) max
Qg
30V 8.5m:@V_GS = 10V 8.3nC
l Control MOSFET for Isolated DC-DC
Converters in Networking Systems
Benefits
l Very Low Gate Charge
l Low R_DS(on) at 4.5V V_GS
l Low Gate Impedance
l Fully Characterized Avalanche Voltage
S
1
S
2
S
3
G
4
AA
8
D
7
D
6
D
5
D
and Current
l 20V V_GS Max. Gate Rating
l Lead-Free
Description
Top View
SO-8
The IRF8721PbF incorporates the latest HEXFET Power MOSFET Silicon Technology into the
industry standard SO-8 package The IRF8721PbF has been optimized for parameters that are
critical in synchronous buck operation including Rds(on) and gate charge to reduce both conduc-
tion and switching losses. The reduced total losses make this product ideal for high efficiency
DC-DC converters that power the latest generation of processors for Notebook and Netcom
applications.
Absolute Maximum Ratings
Parameter
Max.
Units
V_DS
V_GS
I_D @ T_A = 25°C
I_D @ T_A = 70°C
I_DM
P_D @T_A = 25°C
P_D @T_A = 70°C
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, V_GS @ 10V
c ^{Continuous Drain Current, VGS @ 10V}
Pulsed Drain Current
Power Dissipation
Power Dissipation
30
V
± 20
14
11
A
110
2.5
W
1.6
Linear Derating Factor
0.02
W/°C
T_J
T_STG
Operating Junction and
Storage Temperature Range
-55 to + 150
°C
Thermal Resistance
Parameter
R_θJL
R_θJA
g Junction-to-Drain Lead
fg Junction-to-Ambient
Notes  through … are on page 9
www.irf.com
Typ.
–––
–––
Max.
20
50
Units
°C/W
1
07/30/07