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| IRF8714GPBF Datasheet, PDF (1/9 Pages) International Rectifier – HEXFETPower MOSFET | |||
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PD - 96263
IRF8714GPbF
Applications
l Control MOSFET of Sync-Buck
Converters used for Notebook
Processor Power
l Control MOSFET for Isolated DC-DC
Converters in Networking Systems
Benefits
l Very Low Gate Charge
l Very Low RDS(on) at 4.5V VGS
l Ultra-Low Gate Impedance
l Fully Characterized Avalanche Voltage
and Current
VDSS
30V
HEXFET® Power MOSFET
RDS(on) max
Qg
: 8.7m @VGS = 10V 8.1nC
S
1
S
2
S
3
G
4
AA
8
D
7
D
6
D
5
D
l 20V VGS Max. Gate Rating
l 100% tested for Rg
Top View
SO-8
l Lead-Free
l Halogen-Free
Description
The IRF8714GPbF incorporates the latest HEXFET Power MOSFET Silicon Technology into the
industry standard SO-8 package. The IRF8714GPbF has been optimized for parameters that are
critical in synchronous buck operation including Rds(on) and gate charge to reduce both conduction
and switching losses. The reduced total losses make this product ideal for high efficiency DC-DC
converters that power the latest generation of processors for Notebook and Netcom applications.
Absolute Maximum Ratings
Parameter
VDS
Drain-to-Source Voltage
VGS
ID @ TA = 25°C
ID @ TA = 70°C
IDM
Gate-to-Source Voltage
Continuous Drain Current, VGS @ 10V
c Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
PD @TA = 25°C Power Dissipation
PD @TA = 70°C Power Dissipation
Max.
30
± 20
14
11
110
2.5
1.6
Units
V
A
W
TJ
TSTG
Linear Derating Factor
Operating Junction and
Storage Temperature Range
0.02
-55 to + 150
W/°C
°C
Thermal Resistance
RθJL
RθJA
g Parameter
Junction-to-Drain Lead
f Junction-to-Ambient
Notes  through Â
are on page 9
www.irf.com
Typ.
âââ
âââ
Max.
20
50
Units
°C/W
1
07/10/09
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