IRF8707GTRPBF Datasheet, PDF (1/9 Pages) International Rectifier –
Control MOSFET of Sync-Buck  Converters used for Notebook  Processor Power

PD - 96264
IRF8707GPbF
Applications
l Control MOSFET of Sync-Buck
Converters used for Notebook
Processor Power
l Control MOSFET for Isolated
DC-DC Converters in Networking
V_DSS
30V
HEXFET^® Power MOSFET
R_DS(on) max
Qg
: 11.9m @V_GS = 10V 6.2nC
Systems
Benefits
l Very Low Gate Charge
l Very Low R_DS(on) at 4.5V V_GS
l Ultra-Low Gate Impedance
l Fully Characterized Avalanche Voltage
and Current
l 20V V_GS Max. Gate Rating
l 100% tested for Rg
S
1
S
2
S
3
G
4
AA
8
D
7
D
6
D
5
D
Top View
SO-8
l Lead-Free
l Halogen-Free
Description
The IRF8707GPbF incorporates the latest HEXFET Power MOSFET Silicon Technology into the
industry standard SO-8 package. The IRF8707GPbF has been optimized for parameters that are
critical in synchronous buck operation including Rds(on) and gate charge to reduce both conduction
and switching losses. The reduced total losses make this product ideal for high efficiency DC-DC
converters that power the latest generation of processors for notebook and Netcom applications.
Absolute Maximum Ratings
V_DS
V_GS
I_D @ T_A = 25°C
I_D @ T_A = 70°C
I_DM
P_D @T_A = 25°C
P_D @T_A = 70°C
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, V_GS @ 10V
c ^{Continuous Drain Current, VGS @ 10V}
Pulsed Drain Current
Power Dissipation
Power Dissipation
Max.
30
± 20
11
9.1
88
2.5
1.6
Units
V
A
W
T_J
T_STG
Linear Derating Factor
Operating Junction and
Storage Temperature Range
0.02
-55 to + 150
W/°C
°C
Thermal Resistance
R_θJL
R_θJA
g ^Parameter
Junction-to-Drain Lead
f Junction-to-Ambient
Notes  through … are on page 9
www.irf.com
Typ.
–––
–––
Max.
20
50
Units
°C/W
1
07/10/09