IRF8301MPBF_15 Datasheet, PDF (1/10 Pages) International Rectifier – Ultra-low Package Inductance

StrongIRFET
IRF8301MTRPbF
l Ultra-low R_DS(on)
l Low Profile (<0.7 mm)
l Dual Sided Cooling Compatible 
DirectFET™ Power MOSFET ‚
Typical values (unless otherwise specified)
V_DSS
V_GS
R_DS(on)
R_DS(on)
30V max ±20V max 1.3mΩ@10V 1.9mΩ@ 4.5V
l Ultra-low Package Inductance
l Optimized for high speed switching or high current
switch (Power Tool)
l Low Conduction and Switching Losses
l Compatible with existing Surface Mount Techniques 
MT
DirectFET™ ISOMETRIC
Applicable DirectFET Outline and Substrate Outline (see p.7,8 for details)
SQ
SX
ST
MQ
MX
MT
MP
Description
The IRF8301MPbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFET^TM packaging to achieve
very low on-state resistance in a package that has the footprint of an SO-8 or a PQFN 5x6mm and only 0.7mm profile. The DirectFET
package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or
convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The
DirectFET package allows dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by
80%.
The IRF8301MPbF balances both low resistance and low charge along with ultra low package inductance to reduce both conduction and
switching losses. The reduced total losses and very high current carrying capability make this product ideal for power tools.
Ordering Information
Base Part Number
IRF8301MPbF
Package Type
DirectFET MT
Standard Pack
Form
Quantity
Tape and Reel
4800
Orderable Part Number
IRF8301MTRPbF
Absolute Maximum Ratings
Parameter
V_GS
I_D @ TA = 25°C
I_D @ TA = 70°C
I_D @ TC = 25°C
I_DM
EAS
IAR
Gate-to-Source Voltage
e Continuous Drain Current, V_GS @ 10V
e Continuous Drain Current, V_GS @ 10V
f Continuous Drain Current, V_GS @ 10V
g Pulsed Drain Current
h Single Pulse Avalanche Energy
Ãg Avalanche Current
6
5
4
3
2
1
TJ = 25°C
0
0
5
ID = 32A
TJ = 125°C
10
15
20
VGS, Gate -to -Source Voltage (V)
Fig 1. Typical On-Resistance vs. Gate Voltage
Max.
±20
34
27
192
250
260
25
Units
A
mJ
A
5.0
4.0
ID= 25A _{VDS= 24V}
VDS= 15V
3.0
2.0
1.0
0.0
0
10
20
30
40
50
60
QG, Total Gate Charge (nC)
Fig 2. Typical Total Gate Charge vs. Gate-to-Source Voltage
1
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September 6, 2013