IRF8010SPBF_15 Datasheet, PDF (1/11 Pages) International Rectifier – High frequency DC-DC converters

PD - 95433
IRF8010SPbF
SMPS MOSFET _IRF8010LPbF
Applications
l High frequency DC-DC converters
HEXFET^® Power MOSFET
l UPS and Motor Control
l Lead-Free
V_DSS R_DS(on) max
I_D
100V
15mΩ
80A^‡
Benefits
l Low Gate-to-Drain Charge to Reduce
Switching Losses
l Fully Characterized Capacitance Including
Effective C_OSS to Simplify Design, (See
App. Note AN1001)
l Fully Characterized Avalanche Voltage
and Current
l Typical R_DS(on) = 12mΩ
D²Pak
IRF8010S
TO-262
IRF8010L
Absolute Maximum Ratings
Parameter
I_D @ T_C = 25°C Continuous Drain Current, VGS @ 10V
c ^{ID @ TC = 100°C Continuous Drain Current, VGS @ 10V}
I_DM
Pulsed Drain Current
P_D @T_C = 25°C Power Dissipation
V_GS
dv/dt
T_J
T_STG
Linear Derating Factor
Gate-to-Source Voltage
e Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Thermal Resistance
Parameter
R_θJC
R_θJC
Junction-to-Case
g Junction-to-Case (end of life)
R_θCS
R_θJA
Case-to-Sink, Flat, Greased Surface
j Junction-to-Ambient (PCB Mount, steady state)
Max.
80i
57
320
260
1.8
± 20
16
-55 to + 175
300 (1.6mm from case )
Typ.
–––
–––
0.50
–––
Max.
0.57
0.80
–––
40
Units
A
W
W/°C
V
V/ns
°C
Units
°C/W
Notes  through ˆ are on page 8
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1
06/21/04