IRF7F3704_15 Datasheet, PDF (1/7 Pages) International Rectifier – Avalanche Energy Ratings

PD-94340B
HEXFET^® POWER MOSFET
THRU-HOLE (TO-39)
IRF7F3704
20V, N-CHANNEL
Product Summary
Part Number
IRF7F3704
BVDSS
20V
RDS(on)
ID
0.035Ω 12A*
Seventh Generation HEXFET^® power MOSFETs from
International Rectifier utilize advanced processing
techniques to achieve the lowest possible on-resistance
per silicon unit area. This benefit, combined with the
fast switching speed and ruggedized device design
that HEXFET power MOSFETs are well known for,
provides the designer with an extremely efficient
device for use in a wide variety of applications.
These devices are well-suited for applications such
as switching power supplies, motor controls, inverters,
choppers, audio amplifiers and high-energy pulse
circuits.
TO-39
Features:
n Low RDS(on)
n Avalanche Energy Ratings
n Dynamic dv/dt Rating
n Simple Drive Requirements
n Ease of Paralleling
n Hermetically Sealed
n Light Weight
Absolute Maximum Ratings
Parameter
ID @ VGS = 10V, TC = 25°C
ID @ VGS = 10V, TC = 100°C
IDM
PD @ TC = 25°C
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current À
Max. Power Dissipation
Linear Derating Factor
VGS
EAS
IAR
EAR
dv/dt
Gate-to-Source Voltage
Single Pulse Avalanche Energy Á
Avalanche Current À
Repetitive Avalanche Energy À
Peak Diode Recovery dv/dt Â
TJ
TSTG
Operating Junction
Storage Temperature Range
Lead Temperature
Weight
Units
12*
12*
A
48
20
W
0.16
W/°C
±16
V
190
mJ
12
A
2.0
mJ
0.5
V/ns
-55 to 150
o_C
300 ( 0.063 in./1.6mm from case for 10s)
0.98 (Typical)
g
* Current is limited by package
For footnotes refer to the last page
www.irf.com
1
10/10/05