IRF7907PBF Datasheet, PDF (1/10 Pages) International Rectifier – HEXFETR Power MOSFET

PD - 97066
IRF7907PbF
Applications
l Dual SO-8 MOSFET for POL
Converters in Notebook Computers, Servers,
Graphics Cards, Game Consoles
and Set-Top Box
HEXFET^® Power MOSFET
V_DSS
R_DS(on) max
30V Q1 16.4m:@V_GS = 10V
Q2 11.8m:@V_GS = 10V
I_D
9.1A
11A
Benefits
l Very Low R_DS(on) at 4.5V V_GS
l Low Gate Charge
l Fully Characterized Avalanche Voltage
and Current
l 20V V_GS Max. Gate Rating
l Improved Body Diode Reverse Recovery
l 100% Tested for R_G
l Lead-Free
S2 1
G2 2
S1 3
G1 4
8 D2
7 D2
6 D1
5 D1
SO-8
Absolute Maximum Ratings
Parameter
V_DS
V_GS
I_D @ T_A = 25°C
I_D @ T_A = 70°C
I_DM
P_D @T_A = 25°C
P_D @T_A = 70°C
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, V_GS @ 10V
Continuous Drain Current, V_GS @ 10V
Pulsed Drain Current c
Power Dissipation
Power Dissipation
Linear Derating Factor
T_J
T_STG
Operating Junction and
Storage Temperature Range
Thermal Resistance
Parameter
R_θJL
Junction-to-Drain Lead g
R_θJA
Junction-to-Ambient fg
Q1 Max.
Q2 Max.
30
± 20
9.1
11
7.3
8.8
76
85
2.0
2.0
1.3
1.3
0.016
0.016
-55 to + 150
Units
V
A
W
W/°C
°C
Q1 Max.
20
62.5
Q2 Max.
20
62.5
Units
°C/W
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1/4/06