IRF7854PBF Datasheet, PDF (1/8 Pages) International Rectifier – HEXFET Power MOSFET

PD - 97172
IRF7854PbF
Applications
HEXFET^® Power MOSFET
l Primary Side Switch in Bridge or two-
V_DSS
R_DS(on) max
I_D
switch forward topologies using 48V
80V 13.4m:@VGS = 10V 10A
(±10%) or 36V to 60V ETSI range inputs.
l Secondary Side Synchronous
Rectification Switch for 12Vout
l Suitable for 48V Non-Isolated
S
1
Synchronous Buck DC-DC Applications
S
2
AA
8
D
7
D
Benefits
S
3
6
D
l Low Gate to Drain Charge to Reduce
G
4
5
D
Switching Losses
l Fully Characterized Capacitance Including
Top View
SO-8
Effective C_OSS to Simplify Design,
(See App. Note AN1001)
l Fully Characterized Avalanche Voltage
and Current
Absolute Maximum Ratings
Parameter
V_DS
Drain-to-Source Voltage
V_GS
Gate-to-Source Voltage
I_D @ T_A = 25°C
I_D @ T_A = 70°C
I_DM
P_D @T_A = 25°C
Continuous Drain Current, V_GS @ 10V
Continuous Drain Current, V_GS @ 10V
c Pulsed Drain Current
Maximum Power Dissipation
dv/dt
T_J
T_STG
Linear Derating Factor
h Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Thermal Resistance
Parameter
R_θJL
R_θJA
ei ^{Junction-to-Drain Lead}
Junction-to-Ambient (PCB Mount)
Max.
80
± 20
10
7.9
79
2.5
0.02
11
-55 to + 150
Units
V
A
W
W/°C
V/ns
°C
Typ.
–––
–––
Max.
20
50
Units
°C/W
Notes  through ‡ are on page 8
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1
01/05/06