IRF7811W Datasheet, PDF (1/6 Pages) International Rectifier – Power MOSFET for DC-DC Converters

PD-94031A
IRF7811W
HEXFET^® Power MOSFET for DC-DC Converters
• N-Channel Application-Specific MOSFETs
• Ideal for CPU Core DC-DC Converters
• Low Conduction Losses
• Low Switching Losses
S
1
A
8
D
Description
This new device employs advanced HEXFET Power
MOSFET technology to achieve an unprecedented
balance of on-resistance and gate charge. The reduced
conduction and switching losses make it ideal for high
efficiency DC-DC converters that power the latest
generation of microprocessors.
SO-8
S
2
S
3
G
4
7
D
6
D
5
D
Top View
The IRF7811W has been optimized for all parameters
that are critical in synchronous buck converters including
R_DS(on), gate charge and Cdv/dt-induced turn-on immunity.
The IRF7811W offers particulary low R_DS(on) and high Cdv/
dt immunity for synchronous FET applications.
The package is designed for vapor phase, infra-red,
convection, or wave soldering techniques. Power
dissipation of greater than 3W is possible in a typical
PCB mount application.
DEVICE CHARACTERISTICS…
R_DS(on)
Q
G
Q_sw
Q_oss
IRF7811W
9.0mΩ
18nC
5.5nC
12nC
Absolute Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain or Source
Current (V_GS ≥ 4.5V)
Pulsed Drain Current
T = 25°C
A
T_L = 90°C
Power Dissipation
T = 25°C
A
T_L = 90°C
Junction & Storage Temperature Range
Continuous Source Current (Body Diode)
Pulsed Source Current
Thermal Resistance
Parameter
Maximum Junction-to-Ambientƒ
Maximum Junction-to-Lead
Symbol
V_DS
V_GS
I
D
I_DM
P
D
T_J, T_STG
I
S
I_SM
R_θJA
R_θJL
IRF7811W
30
±12
14
13
109
3.1
3.0
–55 to 150
3.8
109
Max.
40
20
Units
V
A
W
°C
A
Units
°C/W
°C/W
3/13/01