IRF7809A Datasheet, PDF (1/4 Pages) International Rectifier – Chipset for DC-DC Converters

PD - 93810
PD - 93811
IIRRFF7788009A/IRF7811A
PROVISIONAL DATASHEET
• N-Channel Application-Specific MOSFETs
• Ideal for CPU Core DC-DC Converters
• Low Conduction Losses
• Low Switching Losses
• Minimizes Parallel MOSFETs for high current
applications
HEXFET^® Chipset for DC-DC Converters
S
1
S
2
AA
8
D
7
D
Description
These new devices employ advanced HEXFET^® Power
MOSFET technology to achieve an unprecedented balance
of on-resistance and gate charge. The reduced conduction
and switching losses make them ideal for high efficiency
DC-DC converters that power the latest generation of
microprocessors.
SO-8
S
3
G
4
6
D
5
D
Top View
Both the IRF7809A and IRF7811A have been optimized
and are 100% tested for all parameters that are critical in
synchronous buck converters including R_DS(on), gate charge
and Cdv/dt-induced turn-on immunity.The IRF7809A offers
particulary low R_DS(on) and high Cdv/dt immunity for
synchronous FET applications. The IRF7811A offers an
extremely low combination of Q & R for reduced
sw
DS(on)
losses in control FET applications.
The package is designed for vapor phase, infra-red,
convection, or wave soldering techniques. Power
dissipation of greater than 2W is possible in a typical PCB
mount application.
Absolute Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain or Source
Current (V_GS ≥ 4.5V)
Pulsed Drain Current
T = 25°C
A
T_L = 90°C
Power Dissipation
T = 25°C
A
T_L = 90°C
Junction & Storage Temperature Range
Continuous Source Current (Body Diode)
Pulsed Source Current
Thermal Resistance
Parameter
Maximum Junction-to-Ambientƒ
Maximum Junction-to-Lead
www.irf.com
Symbol
V_DS
V_GS
I
D
I_DM
P
D
T_J, T_STG
I
S
I_SM
R_θJA
R_θJL
V_DS
R_DS(on)
Q_G
Q_sw
Q
oss
DEVICE RATINGS
IRF7809A
30V
8.5 mΩ
73 nC
22.5 nC
30 nC
IRF7811A
28V
12 mΩ
23 nC
7 nC
31 nC
IRF7809A
IRF7811A
30
28
±12
14.5
11.4
14.2
11.2
100
100
2.5
2.4
–55 to 150
2.5
2.5
50
50
Max.
50
25
Units
V
A
W
°C
A
Units
°C/W
°C/W
1
01/19/00