IRF7807ZPBF Datasheet, PDF (1/10 Pages) International Rectifier – HEXFET Power MOSFET

PD - 95211B
Applications
l Control FET for Notebook Processor Power
l Synchronous Rectifier MOSFET for
Graphics Cards and POL Converters in
Networking and Telecommunication
Systems
Benefits
l Very Low R_DS(on) at 4.5V V_GS
l Ultra-Low Gate Impedance
l Fully Characterized Avalanche Voltage
and Current
l 100% Tested for R_G
l Lead-Free
IRF7807ZPbF
HEXFET^® Power MOSFET
V_DSS
R_DS(on) max
Qg(typ.)
: 30V 13.8m @V_GS = 10V 7.2nC
S
1
S
2
S
3
G
4
AA
8
D
7
D
6
D
5
D
Top View
SO-8
Absolute Maximum Ratings
Parameter
V_DS
Drain-to-Source Voltage
V_GS
I_D @ T_A = 25°C
I_D @ T_A = 70°C
I_DM
P_D @T_A = 25°C
P_D @T_A = 70°C
Gate-to-Source Voltage
Continuous Drain Current, V_GS @ 10V
c ^{Continuous Drain Current, VGS @ 10V}
Pulsed Drain Current
f Power Dissipation
f Power Dissipation
T_J
T_STG
Linear Derating Factor
Operating Junction and
Storage Temperature Range
Thermal Resistance
Parameter
R_θJL
R_θJA
Junction-to-Drain Lead
f Junction-to-Ambient
Max.
30
± 20
11
8.7
88
2.5
1.6
0.02
-55 to + 150
Units
V
A
W
W/°C
°C
Typ.
–––
–––
Max.
20
50
Units
°C/W
Notes  through „ are on page 10
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1
6/29/06