IRF7807VTR Datasheet, PDF (1/8 Pages) International Rectifier – N Channel Application Specific MOSFET

• N Channel Application Specific MOSFET
• Ideal for Mobile DC-DC Converters
• Low Conduction Losses
• Low Switching Losses
• 100% R_G Tested
Description
This new device employs advanced HEXFET Power
MOSFET technology to achieve an unprecedented
balance of on-resistance and gate charge. The
reduction of conduction and switching losses makes
it ideal for high efficiency DC-DC Converters that
power the latest generation of mobile microprocessors.
A pair of IRF7807V devices provides the best cost/
performance solution for system voltages, such as
3.3V and 5V.
PD-94018A
IRF7807V
HEXFET^® Power MOSFET
SO-8
S
1
S
2
S
3
G
4
A
8
D
7
D
6
D
5
D
Top View
DEVICE CHARACTERISTICS…
R_DS(on)
Q_G
Q_SW
Q_OSS
IRF7807V
17 mΩ
9.5 nC
3.4 nC
12 nC
Absolute Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain or Source
(V_GS ≥ 4.5V)
™ Pulsed Drain Current
T_A = 25°C
T_A = 70°C
Power Dissipation eÃÃÃÃÃÃÃ TA = 25°C
T_A = 70°C
Junction & Storage Temperature Range
Continuous Source Current (Body Diode)
™ Pulsed Source Current
Symbol
V_DS
V_GS
I_D
I_DM
P_D
T_J , T_STG
I_S
I_SM
Thermal Resistance
Parameter
eh Maximum Junction-to-Ambient
h Maximum Junction-to-Lead
Symbol
R_θJA
R_θJL
IRF7807V
30
±20
8.3
6.6
66
2.5
1.6
-55 to 150
2.5
66
Units
V
A
W
°C
A
Typ
–––
–––
Max
50
20
Units
°C/W
11/12/03