IRF7807VD1TR Datasheet, PDF (1/9 Pages) International Rectifier – Co-Pack N-channel HEXFET Power MOSFET and Schottky Diode

PD-94078A
IRF7807VD1
FETKY™ MOSFET / SCHOTTKY DIODE
• Co-Pack N-channel HEXFET^ Power MOSFET
and Schottky Diode
• Ideal for Synchronous Rectifiers in DC-DC
Converters Up to 5A Output
• Low Conduction Losses
• Low Switching Losses
A/S
1
A/S
2
A/S
3
8
K/D
7
K/D
6
K/D
• Low Vf Schottky Rectifier
• 100% R_G Tested
Description
The FETKY^™ family of Co-Pack HEXFET^MOSFETs and
SO-8
G
4
5
K/D
D
Top View
Schottky diodes offers the designer an innovative, board
space saving solution for switching regulator and power
management applications. HEXFET power MOSFETs
utilize advanced processing techniques to achieve
DEVICE CHARACTERISTICS…
extremely low on-resistance per silicon area. Combining
this technology with International Rectifier’s low forward
IRF7807VD1
drop Schottky rectifiers results in an extremely efficient
device suitable for use in a wide variety of portable
electronics applications.
R_DS(on)
Q
G
17mΩ
9.5nC
The SO-8 has been modified through a customized
leadframe for enhanced thermal characteristics. The SO-
Q_sw
3.4nC
Q_oss
12nC
8 package is designed for vapor phase, infrared or wave
soldering techniques.
Absolute Maximum Ratings
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Output Current
25°C
™ ^{(VGS ≥ 4.5V)}
Pulsed Drain Current
70°C
Power Dissipation eÃÃÃÃÃÃÃÃÃÃÃ25°C
70°C
Schottky and Body Diode
f Average Forward Current
25°C
70°C
Junction & Storage Temperature Range
Thermal Resistance
Parameter
eÃh Maximum Junction-to-Ambient
h Maximum Junction-to-Lead
www.irf.com
Symbol
V_DS
V_GS
I_D
I_DM
P_D
I_F (AV)
T_J , T_STG
Max
30
±20
8.3
6.6
66
2.5
1.6
3.5
2.2
-55 to 150
Units
V
A
W
°C
Symbol
Typ
R_θJA
–––
R_θJL
–––
Max
50
20
Units
°C/W
1
11/12/03