IRF7807VD1 Datasheet, PDF (1/9 Pages) International Rectifier – FETKY™ MOSFET / SCHOTTKY DIODE

PD-94078
IRF7807VD1
FETKY™ MOSFET / SCHOTTKY DIODE
• Co-Pack N-channel HEXFET^ Power MOSFET
and Schottky Diode
• Ideal for Synchronous Rectifiers in DC-DC
Converters Up to 5A Output
• Low Conduction Losses
• Low Switching Losses
• Low Vf Schottky Rectifier
Description
The FETKY^™ family of Co-Pack HEXFET^MOSFETs and
Schottky diodes offers the designer an innovative, board
space saving solution for switching regulator and power
management applications. HEXFET power MOSFETs
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. Combining
this technology with International Rectifier’s low forward
drop Schottky rectifiers results in an extremely efficient
device suitable for use in a wide variety of portable
electronics applications.
The SO-8 has been modified through a customized
leadframe for enhanced thermal characteristics.The SO-
8 package is designed for vapor phase, infrared or wave
soldering techniques.
SO-8
A/S
1
8
K/D
A/S
2
7
K/D
A/S
3
6
K/D
G
4
5
K/D
D
Top View
DEVICE CHARACTERISTICSU
R_DS(on)
Q
G
Q_sw
Q_oss
IRF7807VD1
17mΩ
9.5nC
3.4nC
12nC
Absolute Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain or Source
25°C
Current (V_GS ≥ 4.5V)
Pulsed Drain CurrentQ
70°C
Power DissipationS
25°C
70°C
Schottky and Body Diode
25°C
Average ForwardCurrentT
70°C
Junction & Storage Temperature Range
Thermal Resistance
Parameter
Maximum Junction-to-AmbientS
Maximum Junction-to-Lead
www.irf.com
Symbol
V
DS
V_GS
I_D
I_DM
P_D
I_F (AV)
T_J, T_STG
R_θJA
R_θJL
Max.
30
±20
8.3
6.6
66
2.5
1.6
3.5
2.2
–55 to 150
Max.
50
20
Units
V
A
W
A
°C
Units
°C/W
°C/W
1
03/05/01