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IRF7807PBF Datasheet, PDF (1/8 Pages) International Rectifier – HEXFET® Chip-Set for DC-DC Converters | |||
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PD â 95290
IRF7807PbF
IRF7807APbF
HEXFET® Chip-Set for DC-DC Converters
⢠N Channel Application Specific MOSFETs
⢠Ideal for Mobile DC-DC Converters
⢠Low Conduction Losses
⢠Low Switching Losses
⢠Lead-Free
Description
These new devices employ advanced HEXFET
Power MOSFET technology to achieve an
unprecedented balance of on-resistance and gate
charge. The reduced conduction and switching losses
make them ideal for high efficiency DC-DC
Converters that power the latest generation of mobile
microprocessors.
A pair of IRF7807 devices provides the best cost/
performance solution for system voltages, such as 3.3V
and 5V.
SO-8
S
1
S
2
S
3
G
4
A
8
D
7
D
6
D
5
D
Top View
Device Features
IRF7807 IRF7807A
Vds
30V
30V
Rds(on) 25m⦠25mâ¦
Qg
17nC 17nC
Qsw
5.2nC
Qoss 16.8nC 16.8nC
Absolute Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain or Source
25°C
Current (VGS ⥠4.5V)
Pulsed Drain CurrentÂ
70°C
Power Dissipation
25°C
70°C
Junction & Storage Temperature Range
Continuous Source Current (Body Diode)Â
Pulsed source Current
Symbol
VDS
VGS
I
D
IDM
PD
TJ, TSTG
I
S
ISM
IRF7807
IRF7807A
30
±12
8.3
8.3
6.6
6.6
66
66
2.5
1.6
â55 to 150
2.5
2.5
66
66
Units
V
A
W
°C
A
Thermal Resistance
Parameter
Maximum Junction-to-AmbientÂ
RθJA
Max.
50
Units
°C/W
www.irf.com
1
09/22/04
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