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IRF7807D1PBF_15 Datasheet, PDF (1/8 Pages) International Rectifier – Low Conduction Losses | |||
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PD- 95208
IRF7807D1PbF
FETKYÂ MOSFET / SCHOTTKY DIODE
⢠Co-Pack N-channel HEXFET® Power MOSFET
and Schottky Diode
⢠Ideal for Synchronous Rectifiers in DC-DC
Converters Up to 5A Output
⢠Low Conduction Losses
⢠Low Switching Losses
⢠Low Vf Schottky Rectifier
⢠Lead-Free
SO-8
A/S
1
A/S
2
A/S
3
G
4
8
K/D
7
K/D
6
K/D
5
K/D
Top View
Description
The FETKY⢠family of Co-Pack HEXFET®MOSFETs and
Schottky diodes offers the designer an innovative, board
space saving solution for switching regulator and power
management applications. HEXFET power MOSFETs
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. Combining
this technology with International Rectifierâs low forward
drop Schottky rectifiers results in an extremely efficient
device suitable for use in a wide variety of portable
electronics applications.
Device Features (Max Values)
VDS
RDS(on)
Qg
Qsw
Qoss
IRF7807D1
30V
25mâ¦
14nC
5.2nC
18.4nC
The SO-8 has been modified through a customized
leadframe for enhanced thermal characteristics. The SO-
8 package is designed for vapor phase, infrared or wave
soldering techniques.
Absolute Maximum Ratings
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain or Source
25°C
ID
Current (VGS ⥠4.5V)
70°C
Pulsed Drain CurrentÂ
IDM
Power Dissipation
25°C
PD
70°C
Schottky and Body Diode
Average ForwardCurrentÂ
25°C
70°C
IF (AV)
Junction & Storage Temperature Range
TJ, TSTG
Thermal Resistance
Parameter
Maximum Junction-to-AmbientÂ
RθJA
www.irf.com
Max.
30
±12
8.3
6.6
66
2.5
1.6
3.5
2.2
â55 to 150
Max.
50
Units
V
A
W
A
°C
Units
°C/W
1
5/5/04
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