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| IRF7805TRPBF Datasheet, PDF (1/5 Pages) International Rectifier – N Channel Application Specific MOSFETs | |||
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PD â 96031A
IRF7805PbF
HEXFET® Chip-Set for DC-DC Converters
⢠N Channel Application Specific MOSFETs
⢠Ideal for Mobile DC-DC Converters
⢠Low Conduction Losses
⢠Low Switching Losses
⢠Lead-Free
Description
This new device employs advanced HEXFET Power
MOSFET technology to achieve an unprecedented
balance of on-resistance and gate charge. The
reduced conduction and switching losses make this
device ideal for high efficiency DC-DC Converters that
power the latest generation of mobile
microprocessors.
The IRF7805PbF offers maximum efficiency for
mobile CPU core DC-DC converters.
SO-8
S
1
S
2
S
3
G
4
A
8
D
7
D
6
D
5
D
Top View
Device Features
VDS
RDS(on)
Qg
Qsw
Qoss
IRF7805PbF
30V
11mâ¦
31nC
11.5nC
36nC
Absolute Maximum Ratings
Parameter
VDS
VGS
ID @ TA = 25°C
ID @ TA = 70°C
IDM
PD @TA = 25°C
PD @TA = 70°C
Drain-to-Source Voltage
Gate-to-Source Voltage
e Continuous Drain Current, VGS @ 10V
e Continuous Drain Current, VGS @ 10V
c Pulsed Drain Current
e Power Dissipation
e Power Dissipation
TJ
TSTG
Linear Derating Factor
Operating Junction and
Storage Temperature Range
Thermal Resistance
Parameter
RθJL
RθJA
g Junction-to-Drain Lead
eg Junction-to-Ambient
Max.
30
± 12
13
10
100
2.5
1.6
0.02
-55 to + 150
Units
V
A
W
W/°C
°C
Typ.
âââ
âââ
Max.
20
50
Units
°C/W
www.irf.com
1
01/09/08
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