IRF7769L1PBF Datasheet, PDF (1/10 Pages) International Rectifier – RoHS Compliant, Halogen Free

l RoHS Compliant, Halogen Free ‚
l Lead-Free (Qualified up to 260°C Reflow) 
l Ideal for High Performance Isolated Converter
Primary Switch Socket
l Optimized for Synchronous Rectification
l Low Conduction Losses
l High Cdv/dt Immunity
l Low Profile (<0.7mm)
l Dual Sided Cooling Compatible 
l Compatible with existing Surface Mount Techniques 
l Industrial Qualified
IRF7769L1TRPbF
DirectFET™ Power MOSFET ‚
Typical values (unless otherwise specified)
V_DSS
V_GS
100V min ±20V max
Q_{g tot}
Q_gd
200nC 110nC
R_DS(on)
2.8mΩ@ 10V
V_gs(th)
2.7V
S
S
D
G
S
S
S
S
S
D
S
Applicable DirectFET Outline and Substrate Outline 
SB
SC
M2
M4
L8
DirectFET™ ISOMETRIC
L4
L6
L8
Description
The IRF7769L1TRPbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFET^TM packaging to achieve
the lowest on-state resistance in a package that has a footprint smaller than a D²PAK and only 0.7 mm profile. The DirectFET package is
compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering
techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows dual
sided cooling to maximize thermal transfer in power systems.
The IRF7769L1TRPbF is optimized for high frequency switching and synchronous rectification applications. The reduced total losses in the
device coupled with the high level of thermal performance enables high efficiency and low temperatures, which are key for system reliability
improvements, and makes this device ideal for high performance power converters.
Part number
IRF7769L1TRPbF
Package Type
DirectFET Large Can
Standard Pack
Form
Quantity
Tape and Reel
4000
Note
"TR" suffix
Absolute Maxim um Ratings
Parameter
V _DS
Drain-to-Source Voltage
V _GS
I_D @ T_C = 25°C
I_D @ T_C = 100°C
I_D @ T_A = 25°C
I_D @ T_C = 25°C
I_DM
E AS
IAR
Gate-to-Source Voltage
f Continuous Drain Current, V_GS @ 10V (Silicon Limited)
f Continuous Drain Current, V_GS @ 10V (Silicon Limited)
e Continuous Drain Current, V_GS @ 10V (Silicon Limited)
f Continuous Drain Current, V_GS @ 10V (Package Limited)
g Pulsed Drain Current
h Single Pulse Avalanche Energy
Ãg Avalanche Current
Max.
100
±20
124
88
20
375
500
260
74
Units
V
A
mJ
A
12.00
10.00
ID = 74A
8.00
6.00
TJ = 125°C
4.00
2.00
0.00
2.0
TJ = 25°C
4.0 6.0 8.0 10.0 12.0 14.0 16.0
VGS, Gate-to-Source Voltage (V)
Notes:
Fig 1. Typical On-Resistance vs. Gate Voltage
 Click on this section to link to the appropriate technical paper.
‚ Click on this section to link to the DirectFET Website.
ƒ Surface mounted on 1 in. square Cu board, steady state.
3.10
TA= 25°C
3.00
2.90
VGS = 7.0V
VGS = 8.0V
VGS = 10V
VGS = 15V
2.80
20
40
60
80
100
ID, Drain Current (A)
Fig 2. Typical On-Resistance vs. Drain Current
„ T_C measured with thermocouple mounted to top (Drain) of part.
… Repetitive rating; pulse width limited by max. junction temperature.
† Starting T_J = 25°C, L = 0.09mH, R_G = 25Ω, I_AS = 74A.
1 www.irf.com © 2012 International Rectifier
February 18, 2013