IRF7739L1PBF Datasheet, PDF (1/10 Pages) International Rectifier – DirectFETPower MOSFET

IRF7739L1TRPbF
Applications
l RoHS Compliant, Halogen Free ‚
l Lead-Free (Qualified up to 260°C Reflow)
l Ideal for High Performance Isolated Converter
Primary Switch Socket
l Optimized for Synchronous Rectification
l Low Conduction Losses
l High Cdv/dt Immunity
l Low Profile (<0.7mm)
l Dual Sided Cooling Compatible 
l Compatible with existing Surface Mount Techniques 
l Industrial Qualified
Applicable DirectFET Outline and Substrate Outline 
DirectFET™ Power MOSFET ‚
Typical values (unless otherwise specified)
V_DSS
40V min
Q_{g tot}
V_GS
R_DS(on)
±20V max 0.70mΩ@ 10V
Q_gd
V_gs(th)
220nC 81nC
2.8V
S
S
D
S
G
S
L8
S
S
SD
S
DirectFET™ ISOMETRIC
SB
SC
M2
M4
L4
L6
L8
Description
The IRF7739L1TRPbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFET^TM packaging to achieve
the lowest on-state resistance in a package that has a footprint smaller than a D²PAK and only 0.7 mm profile. The DirectFET package is compatible
with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques,
when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows dual sided cooling
to maximize thermal transfer in power systems.
The IRF7739L1TRPbF is optimized for high frequency switching and synchronous rectification applications. The reduced total losses in the
device coupled with the high level of thermal performance enables high efficiency and low temperatures, which are key for system reliability
improvements, and makes this device ideal for high performance power converters.
Ordering Information
Base part number
IRF7739L1TRPbF
Package Type
DirectFET Large Can
Standard Pack
Form
Tape and Reel
Quantity
4000
Orderable Part Number
IRF7739L1TRPbF
Absolute Maximum Ratings
Parameter
V_DS
V_GS
I_D @ T_C = 25°C
I_D @ T_C = 100°C
I_D @ T_A = 25°C
I_D @ T_C = 25°C
I_DM
E_AS
I_AR
Drain-to-Source Voltage
Gate-to-Source Voltage
f Continuous Drain Current, V_GS @ 10V (Silicon Limited)
f Continuous Drain Current, V_GS @ 10V (Silicon Limited)
e Continuous Drain Current, V_GS @ 10V (Silicon Limited)
f Continuous Drain Current, V_GS @ 10V (Package Limited)
g Pulsed Drain Current
h Single Pulse Avalanche Energy
Ãg Avalanche Current
10
0.93
ID = 160A
0.92 ^{VGS = 10V}
8
0.91
6
TJ = 25°C
0.90
0.89
4
0.88
2
TJ = 125°C
0.87
0.86
0
5.0 5.5 6.0 6.5 7.0 7.5 8.0
0.85
0
40
Max.
40
±20
270
190
46
375
1070
270
160
80
120
Units
V
A
mJ
A
160
200
VGS, Gate -to -Source Voltage (V)
Fig 1. Typical On-Resistance vs. Gate Voltage
Notes:
 Click on the hyperlink (to the relevant technical document) for more details.
‚ Click on the hyperlink (to the DirectFET website) for more details
ID , Drain Current (A)
Fig 2. Typical On-Resistance vs. Drain Current
„ T_C measured with thermocouple mounted to top (Drain) of part.
… Repetitive rating; pulse width limited by max. junction temperature.
ƒ Surface mounted on 1 in. square Cu board, steady state.
† Starting T_J = 25°C, L = 0.021mH, R_G = 25Ω, I_AS = 160A.
1
www.irf.com © 2012 International Rectifier
February 13 ,2013